Research output: Contribution to journal › Article › peer-review
MOCVD growth and study of magnetic Co films. / Dorovskikh, S. I.; Hairullin, R. R.; Sysoev, S. V. et al.
In: Surface Engineering, Vol. 32, No. 1, 2016, p. 8-14.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - MOCVD growth and study of magnetic Co films
AU - Dorovskikh, S. I.
AU - Hairullin, R. R.
AU - Sysoev, S. V.
AU - Kriventsov, V. V.
AU - Panin, A. V.
AU - Shubin, Y. V.
AU - Morozova, N. B.
AU - Gelfond, N. V.
AU - Korenev, S. V.
PY - 2016
Y1 - 2016
N2 - The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.
AB - The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.
KW - Co films
KW - Co precursor
KW - Magnetic characteristics
KW - MOCVD
KW - Vapour pressure
UR - http://www.scopus.com/inward/record.url?scp=84959360718&partnerID=8YFLogxK
U2 - 10.1179/1743294414Y.0000000424
DO - 10.1179/1743294414Y.0000000424
M3 - Article
AN - SCOPUS:84959360718
VL - 32
SP - 8
EP - 14
JO - Surface Engineering
JF - Surface Engineering
SN - 0267-0844
IS - 1
ER -
ID: 25401946