Standard

MOCVD growth and study of magnetic Co films. / Dorovskikh, S. I.; Hairullin, R. R.; Sysoev, S. V. и др.

в: Surface Engineering, Том 32, № 1, 2016, стр. 8-14.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Dorovskikh, SI, Hairullin, RR, Sysoev, SV, Kriventsov, VV, Panin, AV, Shubin, YV, Morozova, NB, Gelfond, NV & Korenev, SV 2016, 'MOCVD growth and study of magnetic Co films', Surface Engineering, Том. 32, № 1, стр. 8-14. https://doi.org/10.1179/1743294414Y.0000000424

APA

Dorovskikh, S. I., Hairullin, R. R., Sysoev, S. V., Kriventsov, V. V., Panin, A. V., Shubin, Y. V., Morozova, N. B., Gelfond, N. V., & Korenev, S. V. (2016). MOCVD growth and study of magnetic Co films. Surface Engineering, 32(1), 8-14. https://doi.org/10.1179/1743294414Y.0000000424

Vancouver

Dorovskikh SI, Hairullin RR, Sysoev SV, Kriventsov VV, Panin AV, Shubin YV и др. MOCVD growth and study of magnetic Co films. Surface Engineering. 2016;32(1):8-14. doi: 10.1179/1743294414Y.0000000424

Author

Dorovskikh, S. I. ; Hairullin, R. R. ; Sysoev, S. V. и др. / MOCVD growth and study of magnetic Co films. в: Surface Engineering. 2016 ; Том 32, № 1. стр. 8-14.

BibTeX

@article{a95311d441374f9eafd6068a10a9259c,
title = "MOCVD growth and study of magnetic Co films",
abstract = "The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.",
keywords = "Co films, Co precursor, Magnetic characteristics, MOCVD, Vapour pressure",
author = "Dorovskikh, {S. I.} and Hairullin, {R. R.} and Sysoev, {S. V.} and Kriventsov, {V. V.} and Panin, {A. V.} and Shubin, {Y. V.} and Morozova, {N. B.} and Gelfond, {N. V.} and Korenev, {S. V.}",
year = "2016",
doi = "10.1179/1743294414Y.0000000424",
language = "English",
volume = "32",
pages = "8--14",
journal = "Surface Engineering",
issn = "0267-0844",
publisher = "Maney Publishing",
number = "1",

}

RIS

TY - JOUR

T1 - MOCVD growth and study of magnetic Co films

AU - Dorovskikh, S. I.

AU - Hairullin, R. R.

AU - Sysoev, S. V.

AU - Kriventsov, V. V.

AU - Panin, A. V.

AU - Shubin, Y. V.

AU - Morozova, N. B.

AU - Gelfond, N. V.

AU - Korenev, S. V.

PY - 2016

Y1 - 2016

N2 - The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.

AB - The Co(N'acN'ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal-organic chemical vapour deposition. This chelate exhibits good volatility ln (P/P°)=26·45-14006·7/T(K) at moderate temperature values (382-427 K). Co films were grown on Si (100) substrates and studied by Xray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron ; microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.

KW - Co films

KW - Co precursor

KW - Magnetic characteristics

KW - MOCVD

KW - Vapour pressure

UR - http://www.scopus.com/inward/record.url?scp=84959360718&partnerID=8YFLogxK

U2 - 10.1179/1743294414Y.0000000424

DO - 10.1179/1743294414Y.0000000424

M3 - Article

AN - SCOPUS:84959360718

VL - 32

SP - 8

EP - 14

JO - Surface Engineering

JF - Surface Engineering

SN - 0267-0844

IS - 1

ER -

ID: 25401946