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Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide. / Islamov, Damir R.; Zalyalov, Timur M.; Orlov, Oleg M. et al.

In: Applied Physics Letters, Vol. 117, No. 16, 162901, 19.10.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Islamov, DR, Zalyalov, TM, Orlov, OM, Gritsenko, VA & Krasnikov, GY 2020, 'Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide', Applied Physics Letters, vol. 117, no. 16, 162901. https://doi.org/10.1063/5.0023554

APA

Islamov, D. R., Zalyalov, T. M., Orlov, O. M., Gritsenko, V. A., & Krasnikov, G. Y. (2020). Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide. Applied Physics Letters, 117(16), [162901]. https://doi.org/10.1063/5.0023554

Vancouver

Islamov DR, Zalyalov TM, Orlov OM, Gritsenko VA, Krasnikov GY. Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide. Applied Physics Letters. 2020 Oct 19;117(16):162901. doi: 10.1063/5.0023554

Author

Islamov, Damir R. ; Zalyalov, Timur M. ; Orlov, Oleg M. et al. / Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide. In: Applied Physics Letters. 2020 ; Vol. 117, No. 16.

BibTeX

@article{606c13f79d8442368d9e3408bb339c7a,
title = "Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide",
abstract = "The discovery of ferroelectric properties in hafnium oxide has brought back the interest in the ferroelectric non-volatile memory as a possible alternative for low power consumption electronic memories. As far as real hafnium oxide-based materials have defects like oxygen vacancies, their presence might affect the ferroelectric properties due to oxygen atom movements during repolarizationprocesses. In this work, the transport experiments are combined with the modeling to study evolution of the oxygen vacancy concentration during the endurance and to determine the optimal defect density for a higher residual polarization in lanthanum-doped hafnium oxide.",
keywords = "CONDUCTION, MECHANISM, TRAPS",
author = "Islamov, {Damir R.} and Zalyalov, {Timur M.} and Orlov, {Oleg M.} and Gritsenko, {Vladimir A.} and Krasnikov, {Gennady Ya}",
year = "2020",
month = oct,
day = "19",
doi = "10.1063/5.0023554",
language = "English",
volume = "117",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "16",

}

RIS

TY - JOUR

T1 - Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide

AU - Islamov, Damir R.

AU - Zalyalov, Timur M.

AU - Orlov, Oleg M.

AU - Gritsenko, Vladimir A.

AU - Krasnikov, Gennady Ya

PY - 2020/10/19

Y1 - 2020/10/19

N2 - The discovery of ferroelectric properties in hafnium oxide has brought back the interest in the ferroelectric non-volatile memory as a possible alternative for low power consumption electronic memories. As far as real hafnium oxide-based materials have defects like oxygen vacancies, their presence might affect the ferroelectric properties due to oxygen atom movements during repolarizationprocesses. In this work, the transport experiments are combined with the modeling to study evolution of the oxygen vacancy concentration during the endurance and to determine the optimal defect density for a higher residual polarization in lanthanum-doped hafnium oxide.

AB - The discovery of ferroelectric properties in hafnium oxide has brought back the interest in the ferroelectric non-volatile memory as a possible alternative for low power consumption electronic memories. As far as real hafnium oxide-based materials have defects like oxygen vacancies, their presence might affect the ferroelectric properties due to oxygen atom movements during repolarizationprocesses. In this work, the transport experiments are combined with the modeling to study evolution of the oxygen vacancy concentration during the endurance and to determine the optimal defect density for a higher residual polarization in lanthanum-doped hafnium oxide.

KW - CONDUCTION

KW - MECHANISM

KW - TRAPS

UR - http://www.scopus.com/inward/record.url?scp=85094621693&partnerID=8YFLogxK

U2 - 10.1063/5.0023554

DO - 10.1063/5.0023554

M3 - Article

AN - SCOPUS:85094621693

VL - 117

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 162901

ER -

ID: 25864100