Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide. / Islamov, Damir R.; Zalyalov, Timur M.; Orlov, Oleg M. и др.
в: Applied Physics Letters, Том 117, № 16, 162901, 19.10.2020.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
}
TY - JOUR
T1 - Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide
AU - Islamov, Damir R.
AU - Zalyalov, Timur M.
AU - Orlov, Oleg M.
AU - Gritsenko, Vladimir A.
AU - Krasnikov, Gennady Ya
PY - 2020/10/19
Y1 - 2020/10/19
N2 - The discovery of ferroelectric properties in hafnium oxide has brought back the interest in the ferroelectric non-volatile memory as a possible alternative for low power consumption electronic memories. As far as real hafnium oxide-based materials have defects like oxygen vacancies, their presence might affect the ferroelectric properties due to oxygen atom movements during repolarizationprocesses. In this work, the transport experiments are combined with the modeling to study evolution of the oxygen vacancy concentration during the endurance and to determine the optimal defect density for a higher residual polarization in lanthanum-doped hafnium oxide.
AB - The discovery of ferroelectric properties in hafnium oxide has brought back the interest in the ferroelectric non-volatile memory as a possible alternative for low power consumption electronic memories. As far as real hafnium oxide-based materials have defects like oxygen vacancies, their presence might affect the ferroelectric properties due to oxygen atom movements during repolarizationprocesses. In this work, the transport experiments are combined with the modeling to study evolution of the oxygen vacancy concentration during the endurance and to determine the optimal defect density for a higher residual polarization in lanthanum-doped hafnium oxide.
KW - CONDUCTION
KW - MECHANISM
KW - TRAPS
UR - http://www.scopus.com/inward/record.url?scp=85094621693&partnerID=8YFLogxK
U2 - 10.1063/5.0023554
DO - 10.1063/5.0023554
M3 - Article
AN - SCOPUS:85094621693
VL - 117
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 16
M1 - 162901
ER -
ID: 25864100