Research output: Contribution to journal › Article › peer-review
Determination of the oxygen content in amorphous SiO x thin films. / Zamchiy, A. O.; Baranov, E. A.; Merkulova, I. E. et al.
In: Journal of Non-Crystalline Solids, Vol. 518, 15.08.2019, p. 43-50.Research output: Contribution to journal › Article › peer-review
}
TY - JOUR
T1 - Determination of the oxygen content in amorphous SiO x thin films
AU - Zamchiy, A. O.
AU - Baranov, E. A.
AU - Merkulova, I. E.
AU - Khmel, S. Ya
AU - Maximovskiy, E. A.
N1 - Publisher Copyright: © 2019 Elsevier B.V.
PY - 2019/8/15
Y1 - 2019/8/15
N2 - The bonding structure and composition of amorphous silicon suboxide (a-SiO x , 0.25 < x < 0.75) thin films deposited by gas-jet electron beam plasma chemical vapor deposition were studied by Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectroscopy (RBS), and wavelength dispersive X-ray spectroscopy (WDS). Based on the dependence of the integrated absorption of the Si-O-Si asymmetric stretching modes normalized to the silicon atomic density on the x values evaluated by RBS, the proportionality coefficient A SiO of the Si-O-Si asymmetric stretching modes was determined to be 2 × 10 19 cm −2 . Details of the A SiO calculation, the dependence of the silicon atomic density on x, and the limits of integration were discussed. The significant overestimation of the x values obtained from the Si-O-Si stretching mode position in the IR spectra of the films in comparison with the actual values and the presence of a high-frequency shoulder centered at ~ 1140 cm −1 in the IR spectra indicates the inhomogeneity of the structure of the films. At the same time, the parameters of the Si-O-Si asymmetric stretching band (position and full width at half maximum) indicate the absence of a strict phase separation in the structure of the synthesized films, which are thus described by the intermediate model.
AB - The bonding structure and composition of amorphous silicon suboxide (a-SiO x , 0.25 < x < 0.75) thin films deposited by gas-jet electron beam plasma chemical vapor deposition were studied by Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectroscopy (RBS), and wavelength dispersive X-ray spectroscopy (WDS). Based on the dependence of the integrated absorption of the Si-O-Si asymmetric stretching modes normalized to the silicon atomic density on the x values evaluated by RBS, the proportionality coefficient A SiO of the Si-O-Si asymmetric stretching modes was determined to be 2 × 10 19 cm −2 . Details of the A SiO calculation, the dependence of the silicon atomic density on x, and the limits of integration were discussed. The significant overestimation of the x values obtained from the Si-O-Si stretching mode position in the IR spectra of the films in comparison with the actual values and the presence of a high-frequency shoulder centered at ~ 1140 cm −1 in the IR spectra indicates the inhomogeneity of the structure of the films. At the same time, the parameters of the Si-O-Si asymmetric stretching band (position and full width at half maximum) indicate the absence of a strict phase separation in the structure of the synthesized films, which are thus described by the intermediate model.
KW - Fourier transform infrared spectroscopy
KW - Oxygen concentration
KW - Rutherford backscattering spectroscopy
KW - Silicon suboxide
KW - Stoichiometric coefficient
KW - Wavelength dispersive X-ray spectroscopy
KW - HIGH GROWTH-RATE
KW - DEFECTS
KW - SILICON FILMS
KW - DEPOSITION
KW - OPTICAL-PROPERTIES
KW - OPTOELECTRONIC PROPERTIES
KW - GLOW-DISCHARGE
KW - LAYERS
KW - EVOLUTION
KW - ABSORPTION
UR - http://www.scopus.com/inward/record.url?scp=85065720186&partnerID=8YFLogxK
U2 - 10.1016/j.jnoncrysol.2019.05.015
DO - 10.1016/j.jnoncrysol.2019.05.015
M3 - Article
AN - SCOPUS:85065720186
VL - 518
SP - 43
EP - 50
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
ER -
ID: 20042523