TY - JOUR

T1 - Determination of the oxygen content in amorphous SiO x thin films

AU - Zamchiy, A. O.

AU - Baranov, E. A.

AU - Merkulova, I. E.

AU - Khmel, S. Ya

AU - Maximovskiy, E. A.

N1 - Publisher Copyright: © 2019 Elsevier B.V.

PY - 2019/8/15

Y1 - 2019/8/15

N2 - The bonding structure and composition of amorphous silicon suboxide (a-SiO x , 0.25 < x < 0.75) thin films deposited by gas-jet electron beam plasma chemical vapor deposition were studied by Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectroscopy (RBS), and wavelength dispersive X-ray spectroscopy (WDS). Based on the dependence of the integrated absorption of the Si-O-Si asymmetric stretching modes normalized to the silicon atomic density on the x values evaluated by RBS, the proportionality coefficient A SiO of the Si-O-Si asymmetric stretching modes was determined to be 2 × 10 19 cm −2 . Details of the A SiO calculation, the dependence of the silicon atomic density on x, and the limits of integration were discussed. The significant overestimation of the x values obtained from the Si-O-Si stretching mode position in the IR spectra of the films in comparison with the actual values and the presence of a high-frequency shoulder centered at ~ 1140 cm −1 in the IR spectra indicates the inhomogeneity of the structure of the films. At the same time, the parameters of the Si-O-Si asymmetric stretching band (position and full width at half maximum) indicate the absence of a strict phase separation in the structure of the synthesized films, which are thus described by the intermediate model.

AB - The bonding structure and composition of amorphous silicon suboxide (a-SiO x , 0.25 < x < 0.75) thin films deposited by gas-jet electron beam plasma chemical vapor deposition were studied by Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectroscopy (RBS), and wavelength dispersive X-ray spectroscopy (WDS). Based on the dependence of the integrated absorption of the Si-O-Si asymmetric stretching modes normalized to the silicon atomic density on the x values evaluated by RBS, the proportionality coefficient A SiO of the Si-O-Si asymmetric stretching modes was determined to be 2 × 10 19 cm −2 . Details of the A SiO calculation, the dependence of the silicon atomic density on x, and the limits of integration were discussed. The significant overestimation of the x values obtained from the Si-O-Si stretching mode position in the IR spectra of the films in comparison with the actual values and the presence of a high-frequency shoulder centered at ~ 1140 cm −1 in the IR spectra indicates the inhomogeneity of the structure of the films. At the same time, the parameters of the Si-O-Si asymmetric stretching band (position and full width at half maximum) indicate the absence of a strict phase separation in the structure of the synthesized films, which are thus described by the intermediate model.

KW - Fourier transform infrared spectroscopy

KW - Oxygen concentration

KW - Rutherford backscattering spectroscopy

KW - Silicon suboxide

KW - Stoichiometric coefficient

KW - Wavelength dispersive X-ray spectroscopy

KW - HIGH GROWTH-RATE

KW - DEFECTS

KW - SILICON FILMS

KW - DEPOSITION

KW - OPTICAL-PROPERTIES

KW - OPTOELECTRONIC PROPERTIES

KW - GLOW-DISCHARGE

KW - LAYERS

KW - EVOLUTION

KW - ABSORPTION

UR - http://www.scopus.com/inward/record.url?scp=85065720186&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2019.05.015

DO - 10.1016/j.jnoncrysol.2019.05.015

M3 - Article

AN - SCOPUS:85065720186

VL - 518

SP - 43

EP - 50

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

ER -