Determination of the oxygen content in amorphous SiO x thin films

Original language	English
Pages (from-to)	43-50
Number of pages	8
Journal	Journal of Non-Crystalline Solids
Volume	518
DOIs	https://doi.org/10.1016/j.jnoncrysol.2019.05.015
Publication status	Published - 15 Aug 2019

Fourier transform infrared spectroscopy, Oxygen concentration, Rutherford backscattering spectroscopy, Silicon suboxide, Stoichiometric coefficient, Wavelength dispersive X-ray spectroscopy, HIGH GROWTH-RATE, DEFECTS, SILICON FILMS, DEPOSITION, OPTICAL-PROPERTIES, OPTOELECTRONIC PROPERTIES, GLOW-DISCHARGE, LAYERS, EVOLUTION, ABSORPTION

ID: 20042523