Atomic and electronic structures of the native defects responsible for the resistive effect in HfO2

Язык оригинала	английский
Номер статьи	111038
Число страниц	5
Журнал	Microelectronic Engineering
Том	216
DOI	https://doi.org/10.1016/j.mee.2019.111038
Состояние	Опубликовано - 15 авг. 2019

ID: 20642633

Atomic and electronic structures of the native defects responsible for the resistive effect in HfO2: ab initio simulations