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  1. Atomic Structure of Semiconductor Low-Dimensional Heterosystems

    Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 223-253 31 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  2. Biosensors Based on SOI Nanowire Transistors for Biomedicine and Virusology

    Naumova, O. V., Generalov, V. M., Zaitseva, E. G., Latyshev, A. V., Aseev, A. L., Pyankov, S. A., Kolosova, I. V., Ananko, G. G., Agafonov, A. P., Gavrilova, E. V., Maksyutov, R. A. & Safatov, A. S., May 2021, In: Russian Microelectronics. 50, 3, p. 137-145 9 p.

    Research output: Contribution to journal › Article › peer-review

  3. Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles

    Utkin, D. E., Tsarev, A. V., Utkin, E. N., Latyshev, A. V. & Shklyaev, A. A., 1 Sept 2021, In: Optoelectronics, Instrumentation and Data Processing. 57, 5, p. 494-504 11 p.

    Research output: Contribution to journal › Article › peer-review

  4. Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 × 7) at elevated temperatures

    Makeeva, A. A., Petrov, A. S., Rogilo, D. I., Sheglov, D. V. & Latyshev, A. V., 1 Dec 2024, In: Journal of Crystal Growth. 647, 127873.

    Research output: Contribution to journal › Article › peer-review

  5. Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber

    Rodyakina, E. E., Sitnikov, S. V., Rogilo, D. I. & Latyshev, A. V., 1 Nov 2018, In: Russian Microelectronics. 47, 6, p. 365-370 6 p.

    Research output: Contribution to journal › Article › peer-review

  6. Effect of Mie resonances in coatings consisting of dielectric particles on the light propagation in substrate surface layers

    Shklyaev, A. A., Utkin, D. E., Tsarev, A. V. & Latyshev, A. V., Sept 2023, In: Optical Materials. 143, 114171.

    Research output: Contribution to journal › Article › peer-review

  7. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures

    Shklyaev, A. A. & Latyshev, A. V., 28 Jan 2019, In: Applied Surface Science. 465, p. 10-14 5 p.

    Research output: Contribution to journal › Article › peer-review

  8. Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

    Sitnikov, S. V., Rodyakina, E. E. & Latyshev, A. V., 1 Jun 2019, In: Semiconductors. 53, 6, p. 795-799 5 p.

    Research output: Contribution to journal › Article › peer-review

  9. Element base of quantum informatics II: Quantum communications with single photons

    Ryabtsev, I. I., Tretyakov, D. B., Kolyako, A. V., Pleshkov, A. S., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 121-130 10 p.

    Research output: Contribution to journal › Article › peer-review

  10. Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps

    Ryabtsev, I. I., Beterov, I. I., Yakshina, E. A., Tretyakov, D. B., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 109-120 12 p.

    Research output: Contribution to journal › Article › peer-review

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