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  1. Atomic and electronic structures of the native defects responsible for the resistive effect in HfO2: ab initio simulations

    Perevalov, T. V. & Islamov, D. R., 15 Aug 2019, In: Microelectronic Engineering. 216, 5 p., 111038.

    Research output: Contribution to journal › Article › peer-review

  2. Atomic and Electronic Structures of Intrinsic Defects in Ta2O5: Ab Initio Simulation

    Perevalov, T. V., Islamov, D. R. & Chernykh, I. G., 1 Jun 2018, In: JETP Letters. 107, 12, p. 761-765 5 p.

    Research output: Contribution to journal › Article › peer-review

  3. Atomic and electronic structure of oxygen polyvacancies in ZrO2

    Perevalov, T. V. & Islamov, D. R., 25 Jun 2017, In: Microelectronic Engineering. 178, p. 275-278 4 p.

    Research output: Contribution to journal › Article › peer-review

  4. Atomic and Electronic Structure of Defect Ni Complexes and Oxygen Vacancies in HfO2 and Their Influence on Charge Transport in Memristors

    Perevalov, T. V., Islamov, D. R. & Chernov, A. A., Sept 2025, In: Journal of Experimental and Theoretical Physics. 141, 1-3, p. 113-119 7 p.

    Research output: Contribution to journal › Article › peer-review

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