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  1. 2023

  2. Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures

    Shamirzaev, T. S. & Atuchin, V. V., 23 Jul 2023, In: Nanomaterials. 13, 14, 2136.

    Research output: Contribution to journal › Article › peer-review

  3. Optical Orientation of Excitons in a Longitudinal Magnetic Field in Indirect-Band-Gap (In,Al)As/AlAs Quantum Dots with Type-I Band Alignment

    Shamirzaev, T. S., Shumilin, A. V., Smirnov, D. S., Kudlacik, D., Nekrasov, S. V., Kusrayev, Y. G., Yakovlev, D. R. & Bayer, M., 14 Feb 2023, In: Nanomaterials. 13, 4, 729.

    Research output: Contribution to journal › Article › peer-review

  4. Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons

    Shamirzaev, T. S., Atuchin, V. V., Zhilitskiy, V. E. & Gornov, A. Y., 11 Jan 2023, In: Nanomaterials. 13, 2, 308.

    Research output: Contribution to journal › Article › peer-review

  5. 2022

  6. New Spin-Polarized Electron Source Based on Alkali Antimonide Photocathode

    Rusetsky, V. S., Golyashov, V. A., Eremeev, S. V., Kustov, D. A., Rusinov, I. P., Shamirzaev, T. S., Mironov, A. V., Demin, A. Y. & Tereshchenko, O. E., 14 Oct 2022, In: Physical Review Letters. 129, 16, 166802.

    Research output: Contribution to journal › Article › peer-review

  7. 2020

  8. Spectral detection of spin-polarized ultra low-energy electrons in semiconductor heterostructures

    Golyashov, V. A., Rusetsky, V. S., Shamirzaev, T. S., Dmitriev, D. V., Kislykh, N. V., Mironov, A. V., Aksenov, V. V. & Tereshchenko, O. E., 1 Nov 2020, In: Ultramicroscopy. 218, 8 p., 113076.

    Research output: Contribution to journal › Article › peer-review

  9. 2019

  10. GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

    Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R., Emelyanov, E. A., Preobrazhenskii, V. V., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2019, In: Semiconductors. 53, 9, p. 1143-1147 5 p.

    Research output: Contribution to journal › Article › peer-review

  11. Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates

    Abramkin, D. S. & Shamirzaev, T. S., 1 May 2019, In: Semiconductors. 53, 5, p. 703-710 8 p.

    Research output: Contribution to journal › Article › peer-review

  12. 2018

  13. Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

    Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R. & Shamirzaev, T. S., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1484-1490 7 p.

    Research output: Contribution to journal › Article › peer-review

  14. Spinodal Decomposition in InSb/AlAs Heterostructures

    Abramkin, D. S., Bakarov, A. K., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1392-1397 6 p.

    Research output: Contribution to journal › Article › peer-review

  15. Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type

    Abramkin, D. S., Gutakovskii, A. K. & Shamirzaev, T. S., 21 Mar 2018, In: Journal of Applied Physics. 123, 11, 11 p., 115701.

    Research output: Contribution to journal › Article › peer-review

  16. Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

    Abramkin, D. S., Petrushkov, M. O., Emel’yanov, E. A., Putyato, M. A., Semyagin, B. R., Vasev, A. V., Esin, M. Y., Loshkarev, I. D., Gutakovskii, A. K., Preobrazhenskii, V. V. & Shamirzaev, T. S., 1 Mar 2018, In: Optoelectronics, Instrumentation and Data Processing. 54, 2, p. 181-186 6 p.

    Research output: Contribution to journal › Article › peer-review

  17. 2017

  18. Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

    Nikiforov, V. E., Abramkin, D. S. & Shamirzaev, T. S., 1 Nov 2017, In: Semiconductors. 51, 11, p. 1513-1516 4 p.

    Research output: Contribution to journal › Article › peer-review

  19. Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes

    Rodionov, A. A., Golyashov, V. A., Chistokhin, I. B., Jaroshevich, A. S., Derebezov, I. A., Haisler, V. A., Shamirzaev, T. S., Marakhovka, I. I., Kopotilov, A. V., Kislykh, N. V., Mironov, A. V., Aksenov, V. V. & Tereshchenko, O. E., 26 Sept 2017, In: Physical Review Applied. 8, 3, 8 p., 034026.

    Research output: Contribution to journal › Article › peer-review

  20. Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si

    Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Balagan, S. A., Dotsenko, S. A., Galkin, K. N., Galkin, N. G., Shamirzaev, T. S., Gutakovskii, A. K., Iinuma, M. & Terai, Y., 14 Sept 2017, Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017. American Institute of Physics Inc., Vol. 1874. 5 p. 030007. (AIP Conference Proceedings; vol. 1874).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  21. Determining the structure of energy in heterostructures with diffuse interfaces

    Abramkin, D. S., Bakarov, A. K., Kolotovkina, D. A., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2017, In: Bulletin of the Russian Academy of Sciences: Physics. 81, 9, p. 1052-1057 6 p.

    Research output: Contribution to journal › Article › peer-review

  22. Formation of low-dimensional structures in the InSb/AlAs heterosystem

    Abramkin, D. S., Bakarov, A. K., Putyato, M. A., Emelyanov, E. A., Kolotovkina, D. A., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2017, In: Semiconductors. 51, 9, p. 1233-1239 7 p.

    Research output: Contribution to journal › Article › peer-review

  23. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm

    Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Balagan, S. A., Dotcenko, S. A., Galkin, K. N., Galkin, N. G., Shamirzaev, T. S., Gutakovskii, A. K., Latyshev, A. V., Iinuma, M. & Terai, Y., 21 Mar 2017, In: Journal of Applied Physics. 121, 11, 9 p., 113101.

    Research output: Contribution to journal › Article › peer-review

ID: 3444977