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  1. 2018

  2. Light emission of heavily doped AlGaN structures under optical pumping

    Bokhan, P. A., Fateev, N. V., Osinnykh, I. V., Malin, T. V., Zakrevsky, D. E., Zhuravlev, K. S., Wei, X., Li, J. & Chen, L., 1 Apr 2018, In: Journal of Semiconductors. 39, 4, 6 p., 043002.

    Research output: Contribution to journal › Article › peer-review

  3. Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping

    Bokhan, P. A., Zhuravlev, K. S., Zakrevskii, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Jan 2018, In: Quantum Electronics. 48, 3, p. 215-221 7 p.

    Research output: Contribution to journal › Article › peer-review

  4. 2017

  5. Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN: Si layers

    Osinnykh, I. V., Malin, T. V., Plyusnin, V. F. & Zhuravlev, K. S., 15 Aug 2017, In: Journal of Physics: Conference Series. 864, 1, 5 p., 012071.

    Research output: Contribution to journal › Article › peer-review

  6. Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN: Si layers

    Osinnykh, I. V., Malin, T. V., Plyusnin, V. F., Zhuravlev, K. S., Ber, B. Y. & Kazantsev, D. Y., 11 Apr 2017, In: Journal of Physics: Conference Series. 816, 1, 6 p., 012002.

    Research output: Contribution to journal › Article › peer-review

  7. Radiation enhancement in doped AlGaN-structures upon optical pumping

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Jan 2017, In: Technical Physics Letters. 43, 1, p. 46-49 4 p.

    Research output: Contribution to journal › Article › peer-review

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