Игорь Васильевич Осинных - Research output

11 - 16 out of 16Page size: 10

Sort by: Title

Features of Optical Gain in Heavily Doped Al_xGa_{1 –}_xN:Si-Structures
Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., Sept 2021, In: Technical Physics Letters. 47, 9, p. 692-695 4 p.
Research output: Contribution to journal › Article › peer-review
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
Osinnykh, I. V., Malin, T. V., Milakhin, D. S. & Zhuravlev, K. S., May 2024, In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 17, 11, p. 43-48 6 p.
Research output: Contribution to journal › Conference article › peer-review
Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped Al_xGa_1-xN:Si layers with Al content x > 0.5
Osinnykh, I. V., Malin, T. V., Milakhin, D. S., Plyusnin, V. F. & Zhuravlev, K. S., 1 Jun 2019, In: Japanese Journal of Applied Physics. 58, SC, 7 p., 27.
Research output: Contribution to journal › Article › peer-review
Determination of the energy structure of recombination centers in heavily doped Al_xGa_1-xN: Si epitaxial layers with x > 0.5
Osinnykh, I. V., Malin, T. V. & Zhuravlev, K. S., 10 Apr 2018, In: Journal of Physics: Conference Series. 993, 1, 6 p., 012006.
Research output: Contribution to journal › Conference article › peer-review
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
Igor, O. V., Malin, T. V. & Zhuravlev, K. S., Jun 2023, In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 16, 3, p. 33-38 6 p.
Research output: Contribution to journal › Article › peer-review
Amplified luminescence of heavily doped Al_xGa_1-xN structures under optical pumping
Bokhan, P. A., Zhuravlev, K. S., Zakrevskii, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Jan 2018, In: Quantum Electronics. 48, 3, p. 215-221 7 p.
Research output: Contribution to journal › Article › peer-review

Previous 1 2 Next

ID: 3487138

Osinnykh, Igor Vasilevich

Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures

Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x > 0.5

Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN: Si epitaxial layers with x > 0.5

Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping

Features of Optical Gain in Heavily Doped Al_xGa_{1 –}_xN:Si-Structures

Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped Al_xGa_1-xN:Si layers with Al content x > 0.5

Determination of the energy structure of recombination centers in heavily doped Al_xGa_1-xN: Si epitaxial layers with x > 0.5

Amplified luminescence of heavily doped Al_xGa_1-xN structures under optical pumping