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  1. Зарастание N-полярных инверсионных доменов в слоях AlxGa1-xN с различной мольной долей алюминия

    Осинных, И. В., МАЛИН, Т. В., ГИЛИНСКИЙ, А. М., Протасов, Д. Ю. & Вдовин, В. И., 2025, In: Автометрия. 61, 6, p. 59-66

    Research output: Contribution to journal › Article › peer-review

  2. Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

    Osinnykh, I. V., Malin, T. V., Kozhukhov, A. S., Ber, B. Y., Kazancev, D. Y. & Zhuravlev, K. S., Jun 2022, In: Semiconductors. 56, 6, p. 352-359 8 p.

    Research output: Contribution to journal › Article › peer-review

  3. Stimulated emission in heavily doped Al0.68Ga0.32N:Si structures with external cavity

    Bokhan, P. A., Fateev, N. V., Malin, T. V., Osinnykh, I. V., Zakrevsky, D. E. & Zhuravlev, K. S., Dec 2022, In: Journal of Luminescence. 252, 119392.

    Research output: Contribution to journal › Article › peer-review

  4. Radiation enhancement in doped AlGaN-structures upon optical pumping

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Jan 2017, In: Technical Physics Letters. 43, 1, p. 46-49 4 p.

    Research output: Contribution to journal › Article › peer-review

  5. Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN: Si layers

    Osinnykh, I. V., Malin, T. V., Plyusnin, V. F. & Zhuravlev, K. S., 15 Aug 2017, In: Journal of Physics: Conference Series. 864, 1, 5 p., 012071.

    Research output: Contribution to journal › Article › peer-review

  6. Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Sept 2019, In: Technical Physics Letters. 45, 9, p. 951-954 4 p.

    Research output: Contribution to journal › Article › peer-review

  7. Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity

    Bokhan, P. A., Fateev, N. V., Malin, T. V., Osinnykh, I. V., Zakrevsky, D. E. & Zhuravlev, K. S., Jul 2020, In: Optical Materials. 105, 5 p., 109879.

    Research output: Contribution to journal › Article › peer-review

  8. Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN: Si layers

    Osinnykh, I. V., Malin, T. V., Plyusnin, V. F., Zhuravlev, K. S., Ber, B. Y. & Kazantsev, D. Y., 11 Apr 2017, In: Journal of Physics: Conference Series. 816, 1, 6 p., 012002.

    Research output: Contribution to journal › Article › peer-review

  9. Luminescence properties of heavily doped AlxGa1-xN/AlN films grown on sapphire substrate

    Bokhan, P. A., Fateev, N. V., Malin, T. V., Osinnykh, I. V., Zakrevsky, D. E. & Zhuravlev, K. S., 1 Nov 2018, In: Journal of Luminescence. 203, p. 127-134 8 p.

    Research output: Contribution to journal › Article › peer-review

  10. Light emission of heavily doped AlGaN structures under optical pumping

    Bokhan, P. A., Fateev, N. V., Osinnykh, I. V., Malin, T. V., Zakrevsky, D. E., Zhuravlev, K. S., Wei, X., Li, J. & Chen, L., 1 Apr 2018, In: Journal of Semiconductors. 39, 4, 6 p., 043002.

    Research output: Contribution to journal › Article › peer-review

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