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  1. 2021

  2. Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., Sept 2021, In: Technical Physics Letters. 47, 9, p. 692-695 4 p.

    Research output: Contribution to journal › Article › peer-review

  3. 2022

  4. Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

    Osinnykh, I. V., Malin, T. V., Kozhukhov, A. S., Ber, B. Y., Kazancev, D. Y. & Zhuravlev, K. S., Jun 2022, In: Semiconductors. 56, 6, p. 352-359 8 p.

    Research output: Contribution to journal › Article › peer-review

  5. Stimulated emission in heavily doped Al0.68Ga0.32N:Si structures with external cavity

    Bokhan, P. A., Fateev, N. V., Malin, T. V., Osinnykh, I. V., Zakrevsky, D. E. & Zhuravlev, K. S., Dec 2022, In: Journal of Luminescence. 252, 119392.

    Research output: Contribution to journal › Article › peer-review

  6. 2023

  7. Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

    Igor, O. V., Malin, T. V. & Zhuravlev, K. S., Jun 2023, In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 16, 3, p. 33-38 6 p.

    Research output: Contribution to journal › Article › peer-review

  8. 2024

  9. Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy

    Malin, T., Maidebura, Y., Mansurov, V., Gavrilova, T., Gutakovsky, A., Vdovin, V., Ponomarev, S., Loshkarev, I., Osinnykh, I., Volodin, V., Milakhin, D. & Zhuravlev, K., 29 Feb 2024, In: Thin Solid Films. 791, 140246.

    Research output: Contribution to journal › Article › peer-review

  10. Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

    Osinnykh, I. V., Malin, T. V., Milakhin, D. S. & Zhuravlev, K. S., May 2024, In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 17, 11, p. 43-48 6 p.

    Research output: Contribution to journal › Conference article › peer-review

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