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  1. 2022

  2. Al2O3/InGaAs interface passivation by fluorine-containing anodic layers

    Aksenov, M. S., Valisheva, N. A., Gorshkov, D. V., Sidorov, G. Y., Prosvirin, I. P. & Gutakovskii, A. K., 28 Feb 2022, In: Journal of Applied Physics. 131, 8, 085301.

    Research output: Contribution to journal › Article › peer-review

  3. Searching Optimal Growth Parameters for HfO Applied by Plasma-Enhanced Atomic Layer Deposition Method

    Krasnova, I. A., Gorshkov, D. V., Zakirov, E. R., Sidorov, G. Y. & Sabinina, I. V., 2022, Proceedings of the 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials, EDM 2022. IEEE Computer Society, p. 75-78 4 p. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; vol. 2022-June).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  4. 2020

  5. Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

    Klimov, A. E., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Gorshkov, D. V., Ishchenko, D. V., Matyushenko, E. V., Neizvestny, I. G., Sidorov, G. Y., Suprun, S. P., Tarasov, A. S., Tereshchenko, O. E. & Epov, V. S., 1 Oct 2020, In: Semiconductors. 54, 10, p. 1325-1331 7 p.

    Research output: Contribution to journal › Article › peer-review

  6. Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface

    Kovchavtsev, A. P., Aksenov, M. S., Nastov’yak, A. E., Valisheva, N. A., Gorshkov, D. V., Sidorov, G. Y. & Dmitriev, D. V., 1 May 2020, In: Technical Physics Letters. 46, 5, p. 469-472 4 p.

    Research output: Contribution to journal › Article › peer-review

  7. 2019

  8. Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion: In Films in the Vicinity of a Band Inversion

    Klimov, A. E., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Gorshkov, D. V., Ishchenko, D. V., Sidorov, G. Y., Suprun, S. P., Tarasov, A. S., Epov, V. S. & Tereshchenko, O. E., 1 Sept 2019, In: Semiconductors. 53, 9, p. 1182-1186 5 p.

    Research output: Contribution to journal › Article › peer-review

  9. Surface photovoltage in a p-GaN(Cs) photocathode

    Rozhkov, S. A., Bakin, V. V., Gorshkov, D. V., Kosolobov, S. N. & Scheibler, H. E., 17 Apr 2019, In: Journal of Physics: Conference Series. 1199, 1, 012031.

    Research output: Contribution to journal › Conference article › peer-review

  10. 2017

  11. Evolution of the transverse and longitudinal energy distributions of electrons emitted from a GaAsP photocathode as a function of its degradation state

    Jones, L. B., Scheibler, H. E., Gorshkov, D. V., Terekhov, A. S., Militsyn, B. L. & Noakes, T. C. Q., 14 Jun 2017, In: Journal of Applied Physics. 121, 22, 9 p., 225703.

    Research output: Contribution to journal › Article › peer-review

ID: 3441760