Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties › Research Explorer

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Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782620100164
Final published version

A. E. Klimov
A. N. Akimov
I. O. Akhundov
V. A. Golyashov
D. V. Gorshkov
D. V. Ishchenko
E. V. Matyushenko
I. G. Neizvestny
G. Yu Sidorov
S. P. Suprun
A. S. Tarasov
O. E. Tereshchenko
V. S. Epov

Original language	English
Pages (from-to)	1325-1331
Number of pages	7
Journal	Semiconductors
Volume	54
Issue number	10
DOIs	https://doi.org/10.1134/S1063782620100164
Publication status	Published - 1 Oct 2020

OECD FOS+WOS

1.03 PHYSICAL SCIENCES AND ASTRONOMY

Research areas

ferroelectric phase transition, field effect, MIS structure, PbSnTe:In solid solution, SOLID-SOLUTIONS, PbSnTe, In solid solution

ID: 25675814