261 - 270 out of 450Page size: 10
  1. 2019

  2. Plasmonic Field Enhancement by Metallic Subwave Lattices on Silicon in the Near-Infrared Range

    Yakimov, A. I., Bloshkin, A. A. & Dvurechenskii, A. V., 1 Sept 2019, In: JETP Letters. 110, 6, p. 411-416 6 p.

    Research output: Contribution to journal › Article › peer-review

  3. Real-time observation of self-interstitial reactions on an atomically smooth silicon surface

    Kosolobov, S., Nazarikov, G., Sitnikov, S., Pshenichnyuk, I., Fedina, L. & Latyshev, A., 1 Sept 2019, In: Surface Science. 687, p. 25-33 9 p.

    Research output: Contribution to journal › Article › peer-review

  4. Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion: In Films in the Vicinity of a Band Inversion

    Klimov, A. E., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Gorshkov, D. V., Ishchenko, D. V., Sidorov, G. Y., Suprun, S. P., Tarasov, A. S., Epov, V. S. & Tereshchenko, O. E., 1 Sept 2019, In: Semiconductors. 53, 9, p. 1182-1186 5 p.

    Research output: Contribution to journal › Article › peer-review

  5. Atomic and electronic structures of the native defects responsible for the resistive effect in HfO2: ab initio simulations

    Perevalov, T. V. & Islamov, D. R., 15 Aug 2019, In: Microelectronic Engineering. 216, 5 p., 111038.

    Research output: Contribution to journal › Article › peer-review

  6. Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization: DFT simulation

    Islamov, D. R. & Perevalov, T. V., 15 Aug 2019, In: Microelectronic Engineering. 216, 4 p., 111041.

    Research output: Contribution to journal › Article › peer-review

  7. Kinetics of anticrossing between slip traces and vicinal steps on crystal surfaces

    Coupeau, C., Kazantsev, D. M., Drouet, M. & Alperovich, V. L., 15 Aug 2019, In: Acta Materialia. 175, p. 206-213 8 p.

    Research output: Contribution to journal › Article › peer-review

  8. Step bunching phenomena on Si(0 0 1) surface induced by DC heating during sublimation and Si deposition

    Rodyakina, E. E., Sitnikov, S. V., Rogilo, D. I. & Latyshev, A. V., 15 Aug 2019, In: Journal of Crystal Growth. 520, p. 85-88 4 p.

    Research output: Contribution to journal › Article › peer-review

  9. Topological Protection Brought to Light by the Time-Reversal Symmetry Breaking

    Piatrusha, S. U., Tikhonov, E. S., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A. & Khrapai, V. S., 2 Aug 2019, In: Physical Review Letters. 123, 5, 6 p., 056801.

    Research output: Contribution to journal › Article › peer-review

  10. Electron emission from GaAs(Cs,O): Transition from negative to positive effective affinity

    Zhuravlev, A. G., Khoroshilov, V. S. & Alperovich, V. L., 31 Jul 2019, In: Applied Surface Science. 483, p. 895-900 6 p.

    Research output: Contribution to journal › Article › peer-review

  11. Edge States and Capacitance of a 2D Topological Insulator

    Braginsky, L. S. & Entin, M. V., 1 Jun 2019, In: Physica Status Solidi (B) Basic Research. 256, 6, 4 p., 1800675.

    Research output: Contribution to journal › Article › peer-review

Previous 1...23 24 25 26 27 28 29 30 ...45 Next

ID: 3084764