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  1. 2018

  2. Electronic structure of stoichiometric and oxygen-deficient ferroelectric Hf0.5Zr0.5O2

    Perevalov, T. V., Islamov, D. R., Gritsenko, V. A. & Prosvirin, I. P., 11 May 2018, In: Nanotechnology. 29, 19, 8 p., 194001.

    Research output: Contribution to journal › Article › peer-review

  3. Estimation of the Scanning Speed of Random Texture by a Multirow Focal Plane Array

    Gromilin, G. I., Kosykh, V. P., Drazhnikov, B. N., Kozlov, K. V. & Vasil’ev, V. N., 1 May 2018, In: Optoelectronics, Instrumentation and Data Processing. 54, 3, p. 250-255 6 p.

    Research output: Contribution to journal › Article › peer-review

  4. Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

    Volodin, V. A., Gritsenko, V. A. & Chin, A., 1 May 2018, In: Technical Physics Letters. 44, 5, p. 424-427 4 p.

    Research output: Contribution to journal › Article › peer-review

  5. New Method of Porous Ge Layer Fabrication: Structure and Optical Properties

    Gorokhov, E. B., Astankova, K. N., Azarov, I. A., Volodin, V. A. & Latyshev, A. V., 1 May 2018, In: Semiconductors. 52, 5, p. 628-631 4 p.

    Research output: Contribution to journal › Article › peer-review

  6. Photoemission properties of flat and rough GaAs surfaces with cesium and oxygen layers

    Zhuravlev, A. G., Kazantsev, D. M., Khoroshilov, V. S., Kozhukhov, A. S. & Alperovich, V. L., 10 Apr 2018, In: Journal of Physics: Conference Series. 993, 1, 6 p., 012007.

    Research output: Contribution to journal › Conference article › peer-review

  7. Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type

    Abramkin, D. S., Gutakovskii, A. K. & Shamirzaev, T. S., 21 Mar 2018, In: Journal of Applied Physics. 123, 11, 11 p., 115701.

    Research output: Contribution to journal › Article › peer-review

  8. Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

    Abramkin, D. S., Petrushkov, M. O., Emel’yanov, E. A., Putyato, M. A., Semyagin, B. R., Vasev, A. V., Esin, M. Y., Loshkarev, I. D., Gutakovskii, A. K., Preobrazhenskii, V. V. & Shamirzaev, T. S., 1 Mar 2018, In: Optoelectronics, Instrumentation and Data Processing. 54, 2, p. 181-186 6 p.

    Research output: Contribution to journal › Article › peer-review

  9. Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots

    Bloshkin, A. A., Yakimov, A. I., Zinovieva, A. F., Zinoviev, V. A. & Dvurechenskii, A. V., Mar 2018, In: Journal of Surface Investigation. 12, 2, p. 306-316 11 p.

    Research output: Contribution to journal › Article › peer-review

  10. Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure

    Tyschenko, I. E., Krivyakin, G. K. & Volodin, V. A., 1 Feb 2018, In: Semiconductors. 52, 2, p. 268-272 5 p.

    Research output: Contribution to journal › Article › peer-review

  11. Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

    Shklyaev, A. A., Volodin, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., 7 Jan 2018, In: Journal of Applied Physics. 123, 1, 8 p., 015304.

    Research output: Contribution to journal › Article › peer-review

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