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  1. 2019

  2. Компенсированный высокоомный буфер для GaN HEMT

    Malin, T. V., Milakhin, D. S., Aleksandrov, I. A., Zemlyakov, V. E., Protasov, D. Y., Kozhuhov, A. S., Ber, B. Y., Mansurov, V. G. & Журавлев, К. С., 2019, In: Электроника и микроэлектроника СВЧ. 1, 1, p. 44-48 5 p.

    Research output: Contribution to journal › Meeting Abstract › peer-review

  3. 2018

  4. Modified Optical Scheme for a Silicon Electro-Optical Modulator with a Grating Coupling Element

    Tsarev, A. V. & Taziev, R. M., 26 Nov 2018, 2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 306-308 3 p. 8545539. (2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  5. Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures

    Atmaca, G., Narin, P., Kutlu, E., Malin, T. V., Mansurov, V. G., Zhuravlev, K. S., Lisesivdin, S. B. & Ozbay, E., Mar 2018, In: IEEE Transactions on Electron Devices. 65, 3, p. 950-956 7 p.

    Research output: Contribution to journal › Article › peer-review

  6. Giant gap-plasmon tip-enhanced Raman scattering of MoS2 monolayers on Au nanocluster arrays

    Milekhin, A. G., Rahaman, M., Rodyakina, E. E., Latyshev, A. V., Dzhagan, V. M. & Zahn, D. R. T., 14 Feb 2018, In: Nanoscale. 10, 6, p. 2755-2763 9 p.

    Research output: Contribution to journal › Article › peer-review

  7. 2017

  8. Controllable electronic transformer based on the resonance structure with switching capacitor for low-rise buildings residential area power supply stabilization systems

    Zotov, L. G., Razinkin, V. P. & Atuchin, V. V., 1 Oct 2017, In: International Journal of Electrical Power and Energy Systems. 91, p. 117-120 4 p.

    Research output: Contribution to journal › Article › peer-review

  9. Spectroscopy of Vibrational States in Low-Dimensional Semiconductor Systems

    Milekhin, A. G. & Zahn, D. R. T., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 157-186 30 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  10. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures

    Shklyaev, A. A., Romanyuk, K. N., Kosolobov, S. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 325-344 20 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  11. The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element

    Islamov, D. R., Perevalov, T. V., Gritsenko, V. A., Aliev, V. S., Saraev, A. A., Kaichev, V. V., Ivanova, E. V., Zamoryanskaya, M. V. & Chin, A., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 493-504 12 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  12. 2016

  13. Localized surface plasmons in structures with linear Au nanoantennas on a SiO2/Si surface

    Milekhin, I. A., Kuznetsov, S. A., Rodyakina, E. E., Milekhin, A. G., Latyshev, A. V. & Zahn, D. R. T., 2016, In: Beilstein Journal of Nanotechnology. 7, 1, p. 1519-1526 8 p.

    Research output: Contribution to journal › Article › peer-review

  14. 2011

  15. Технология получения высокоупорядоченной ступенчатой поверхности Si (111) -7x7

    Романюк, К. Н. & Шкляев, А. А., 25 Nov 2011, Редакционно-издательский центр НГУ, Patent No. 6, Priority date 22 Nov 2011

    Research output: Patent › Know-how registration

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