Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	950-956
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	3
DOIs	https://doi.org/10.1109/TED.2018.2796501
Publication status	Published - Mar 2018

2-dimensional electron gas (2DEG), AlGaN, drift velocity, gallium nitride (GaN), negative differential resistivity (NDR), SiN passivation

ID: 41276054