1. Cu2ZnSnS4crystal growth using an SnCl2based flux

    Kokh, K. A., Atuchin, V. V., Adichtchev, S. V., Gavrilova, T. A., Bakhadur, A. M., Klimov, A. O., Korolkov, I. V., Kuratieva, N. V., Mukherjee, S., Pervukhina, N. V. & Surovtsev, N. V., 28 Jan 2021, In: CrystEngComm. 23, 4, p. 1025-1032 8 p.

    Research output: Contribution to journalArticlepeer-review

  2. Dependence of light reflection of germanium Mie nanoresonators on their aspect ratio

    Utkin, D. E., Anikin, K. V., Veber, S. L. & Shklyaev, A. A., Nov 2020, In: Optical Materials. 109, 5 p., 110466.

    Research output: Contribution to journalArticlepeer-review

  3. Diffusion in GaN/AlN superlattices: DFT and EXAFS study

    Aleksandrov, I. A., Malin, T. V., Zhuravlev, K. S., Trubina, S. V., Erenburg, S. B., Pecz, B. & Lebiadok, Y. V., 15 Jun 2020, In: Applied Surface Science. 515, 7 p., 146001.

    Research output: Contribution to journalArticlepeer-review

  4. Donor-acceptor nature of orange photoluminescence in AlN

    Aleksandrov, I. A., Malin, T. V., Milakhin, D. S., Ber, B. Y., Kazantsev, D. Y. & Zhuravlev, K. S., Oct 2020, In: Semiconductor Science and Technology. 35, 12, 9 p., 125006.

    Research output: Contribution to journalArticlepeer-review

  5. Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x > 0.5

    Osinnykh, I. V., Malin, T. V., Milakhin, D. S., Plyusnin, V. F. & Zhuravlev, K. S., 1 Jun 2019, In: Japanese Journal of Applied Physics. 58, SC, 7 p., 27.

    Research output: Contribution to journalArticlepeer-review

  6. Double-Channel Electron Transport in Suspended Quantum Point Contacts with in-Plane Side Gates

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Bakarov, A. K. & Shklyaev, A. A., Dec 2020, In: Semiconductors. 54, 12, p. 1605-1610 6 p.

    Research output: Contribution to journalArticlepeer-review

  7. Double Complex Salts [Ln(C 6 H 5 NO 2 ) 3 (H 2 O) 2 ][Cr(NCS) 6 ] · 2H 2 O (Ln = Lu, Ce, Y): Synthesis and Crystal Structure

    Cherkasova, E. V., Pervukhina, N. V., Kuratieva, N. V. & Cherkasova, T. G., 1 Mar 2019, In: Russian Journal of Inorganic Chemistry. 64, 3, p. 329-334 6 p.

    Research output: Contribution to journalArticlepeer-review

  8. Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements

    Kablukova, E., Sabelfeld, K., Protasov, D. Y. & Zhuravlev, K. S., 1 Dec 2020, In: Monte Carlo Methods and Applications. 26, 4, p. 263-271 9 p.

    Research output: Contribution to journalArticlepeer-review

  9. Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior

    Dabard, C., Shklyaev, A. A., Armbrister, V. A. & Aseev, A. L., 1 Jan 2020, In: Thin Solid Films. 693, 7 p., 137681.

    Research output: Contribution to journalArticlepeer-review

  10. Electrochemically exfoliated thin Bi2Se3 films and van der Waals heterostructures Bi2Se3/graphene

    Antonova, I. V., Nebogatikova, N. A., Kokh, K. A., Kustov, D. A., Soots, R. A., Golyashov, V. A. & Tereshchenko, O. E., 7 Jan 2020, In: Nanotechnology. 31, 12, 7 p., 125602.

    Research output: Contribution to journalArticlepeer-review

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