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  1. The charge transport mechanism in amorphous boron nitride

    Novikov, Y. N. & Gritsenko, V. A., 15 Sept 2020, In: Journal of Non-Crystalline Solids. 544, 4 p., 120213.

    Research output: Contribution to journal › Article › peer-review

  2. The DA-pHEMT heterostructures for power microwave transistors

    Zhuravlev, K. S., Protasov, D. Y., Gulyaev, D. V., Bakarov, A. K., Toropov, A. I., Lapin, V. G., Lukashin, V. M. & Pashkovskii, A. B., 1 May 2019, 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 3 p. 8804008. (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  3. The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures

    Sonmez, F., Ardali, S., Lisesivdin, S. B., Malin, T., Mansurov, V., Zhuravlev, K. & Tiras, E., Jun 2021, In: Journal of Physics Condensed Matter. 33, 25, 255501.

    Research output: Contribution to journal › Article › peer-review

  4. The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures

    Sonmez, F., Ardali, S., Atmaca, G., Lisesivdin, S. B., Malin, T., Mansurov, V., Zhuravlev, K. & Tiras, E., Feb 2021, In: Materials Science in Semiconductor Processing. 122, 8 p., 105449.

    Research output: Contribution to journal › Article › peer-review

  5. The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

    Chistokhin, I. B., Aksenov, M. S., Valisheva, N. A., Dmitriev, D. V., Marchishin, I. V., Toropov, A. I. & Zhuravlev, K. S., 1 Feb 2019, In: Technical Physics Letters. 45, 2, p. 180-184 5 p.

    Research output: Contribution to journal › Article › peer-review

  6. The modification of optical properties of the surfaces by the glancing angle deposition of TiO2

    Lemzyakov, A., Konstantin, K., Porosev, V., Azarov, I. & Shklyaev, A., 17 Nov 2020, Synchrotron and Free Electron Laser Radiation: Generation and Application, SFR 2020. Knyazev, B. & Vinokurov, N. (eds.). American Institute of Physics Inc., 060008. (AIP Conference Proceedings; vol. 2299).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  7. The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element

    Islamov, D. R., Perevalov, T. V., Gritsenko, V. A., Aliev, V. S., Saraev, A. A., Kaichev, V. V., Ivanova, E. V., Zamoryanskaya, M. V. & Chin, A., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 493-504 12 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  8. The reentrant four-layer quasi-elliptic bandstop filter

    Atuchin, V. V., Gorbachev, A. P., Khrustalev, V. A. & Tarasenko, N. V., 1 Jan 2019, In: Electronics (Switzerland). 8, 1, 20 p., 81.

    Research output: Contribution to journal › Article › peer-review

  9. The role of a plasmonic substrate on the enhancement and spatial resolution of tip-enhanced Raman scattering

    Rahaman, M., Milekhin, A. G., Mukherjee, A., Rodyakina, E. E., Latyshev, A. V., Dzhagan, V. M. & Zahn, D. R. T., 1 May 2019, In: Faraday Discussions. 214, p. 309-323 15 p.

    Research output: Contribution to journal › Article › peer-review

  10. Transformation of the InP(001) surface upon annealing in an arsenic flux

    Dmitriev, D. V., Kolosovsky, D. A., Gavrilova, T. A., Gutakovskii, A. K., Toropov, A. I. & Zhuravlev, K. S., Aug 2021, In: Surface Science. 710, 121861.

    Research output: Contribution to journal › Article › peer-review

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