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Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates. / Rumyantsev, V. V.; Kozlov, D. V.; Morozov, S. V. и др.

в: Semiconductor Science and Technology, Том 32, № 9, 095007, 16.08.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Rumyantsev, VV, Kozlov, DV, Morozov, SV, Fadeev, MA, Kadykov, AM, Teppe, F, Varavin, VS, Yakushev, MV, Mikhailov, NN, Dvoretskii, SA & Gavrilenko, VI 2017, 'Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates', Semiconductor Science and Technology, Том. 32, № 9, 095007. https://doi.org/10.1088/1361-6641/aa76a0

APA

Rumyantsev, V. V., Kozlov, D. V., Morozov, S. V., Fadeev, M. A., Kadykov, A. M., Teppe, F., Varavin, V. S., Yakushev, M. V., Mikhailov, N. N., Dvoretskii, S. A., & Gavrilenko, V. I. (2017). Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates. Semiconductor Science and Technology, 32(9), [095007]. https://doi.org/10.1088/1361-6641/aa76a0

Vancouver

Rumyantsev VV, Kozlov DV, Morozov SV, Fadeev MA, Kadykov AM, Teppe F и др. Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates. Semiconductor Science and Technology. 2017 авг. 16;32(9):095007. doi: 10.1088/1361-6641/aa76a0

Author

Rumyantsev, V. V. ; Kozlov, D. V. ; Morozov, S. V. и др. / Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates. в: Semiconductor Science and Technology. 2017 ; Том 32, № 9.

BibTeX

@article{8fcf61a5cce741309c024bd8865fb6b8,
title = "Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates",
abstract = "The energy spectra of the mercury vacancy, the most common acceptor in HgCdTe material, is studied via numerical calculations and low temperature photoconductivity (PC) measurements of 'vacancy-doped' HgCdTe films with low cadmium content. Since the Hg vacancy is known to be a double acceptor, the model for the helium atom was adopted for degerate valence band of zinc blende semiconductors to classify the observed PC bands. This approach provides a fairly good description of the photoionization of both neutral and singly-ionized vacancy when the central cell potential is taken into account.",
keywords = "annealing, double acceptors, Fourier transform infrared spectroscopy, HgCdTe, Luttinger-Kohn model, STATES, CYCLOTRON-RESONANCE, DEEP LEVELS, HG1-XCDXTE, HETEROSTRUCTURES, ELECTRICAL-PROPERTIES, IMPURITY, HGTE QUANTUM-WELLS, SPECTROSCOPY, SPECTRA",
author = "Rumyantsev, {V. V.} and Kozlov, {D. V.} and Morozov, {S. V.} and Fadeev, {M. A.} and Kadykov, {A. M.} and F. Teppe and Varavin, {V. S.} and Yakushev, {M. V.} and Mikhailov, {N. N.} and Dvoretskii, {S. A.} and Gavrilenko, {V. I.}",
year = "2017",
month = aug,
day = "16",
doi = "10.1088/1361-6641/aa76a0",
language = "English",
volume = "32",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "9",

}

RIS

TY - JOUR

T1 - Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

AU - Rumyantsev, V. V.

AU - Kozlov, D. V.

AU - Morozov, S. V.

AU - Fadeev, M. A.

AU - Kadykov, A. M.

AU - Teppe, F.

AU - Varavin, V. S.

AU - Yakushev, M. V.

AU - Mikhailov, N. N.

AU - Dvoretskii, S. A.

AU - Gavrilenko, V. I.

PY - 2017/8/16

Y1 - 2017/8/16

N2 - The energy spectra of the mercury vacancy, the most common acceptor in HgCdTe material, is studied via numerical calculations and low temperature photoconductivity (PC) measurements of 'vacancy-doped' HgCdTe films with low cadmium content. Since the Hg vacancy is known to be a double acceptor, the model for the helium atom was adopted for degerate valence band of zinc blende semiconductors to classify the observed PC bands. This approach provides a fairly good description of the photoionization of both neutral and singly-ionized vacancy when the central cell potential is taken into account.

AB - The energy spectra of the mercury vacancy, the most common acceptor in HgCdTe material, is studied via numerical calculations and low temperature photoconductivity (PC) measurements of 'vacancy-doped' HgCdTe films with low cadmium content. Since the Hg vacancy is known to be a double acceptor, the model for the helium atom was adopted for degerate valence band of zinc blende semiconductors to classify the observed PC bands. This approach provides a fairly good description of the photoionization of both neutral and singly-ionized vacancy when the central cell potential is taken into account.

KW - annealing

KW - double acceptors

KW - Fourier transform infrared spectroscopy

KW - HgCdTe

KW - Luttinger-Kohn model

KW - STATES

KW - CYCLOTRON-RESONANCE

KW - DEEP LEVELS

KW - HG1-XCDXTE

KW - HETEROSTRUCTURES

KW - ELECTRICAL-PROPERTIES

KW - IMPURITY

KW - HGTE QUANTUM-WELLS

KW - SPECTROSCOPY

KW - SPECTRA

UR - http://www.scopus.com/inward/record.url?scp=85028764511&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/aa76a0

DO - 10.1088/1361-6641/aa76a0

M3 - Article

AN - SCOPUS:85028764511

VL - 32

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 9

M1 - 095007

ER -

ID: 9915519