Research output: Contribution to journal › Article › peer-review
Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates. / Rumyantsev, V. V.; Kozlov, D. V.; Morozov, S. V. et al.
In: Semiconductor Science and Technology, Vol. 32, No. 9, 095007, 16.08.2017.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates
AU - Rumyantsev, V. V.
AU - Kozlov, D. V.
AU - Morozov, S. V.
AU - Fadeev, M. A.
AU - Kadykov, A. M.
AU - Teppe, F.
AU - Varavin, V. S.
AU - Yakushev, M. V.
AU - Mikhailov, N. N.
AU - Dvoretskii, S. A.
AU - Gavrilenko, V. I.
PY - 2017/8/16
Y1 - 2017/8/16
N2 - The energy spectra of the mercury vacancy, the most common acceptor in HgCdTe material, is studied via numerical calculations and low temperature photoconductivity (PC) measurements of 'vacancy-doped' HgCdTe films with low cadmium content. Since the Hg vacancy is known to be a double acceptor, the model for the helium atom was adopted for degerate valence band of zinc blende semiconductors to classify the observed PC bands. This approach provides a fairly good description of the photoionization of both neutral and singly-ionized vacancy when the central cell potential is taken into account.
AB - The energy spectra of the mercury vacancy, the most common acceptor in HgCdTe material, is studied via numerical calculations and low temperature photoconductivity (PC) measurements of 'vacancy-doped' HgCdTe films with low cadmium content. Since the Hg vacancy is known to be a double acceptor, the model for the helium atom was adopted for degerate valence band of zinc blende semiconductors to classify the observed PC bands. This approach provides a fairly good description of the photoionization of both neutral and singly-ionized vacancy when the central cell potential is taken into account.
KW - annealing
KW - double acceptors
KW - Fourier transform infrared spectroscopy
KW - HgCdTe
KW - Luttinger-Kohn model
KW - STATES
KW - CYCLOTRON-RESONANCE
KW - DEEP LEVELS
KW - HG1-XCDXTE
KW - HETEROSTRUCTURES
KW - ELECTRICAL-PROPERTIES
KW - IMPURITY
KW - HGTE QUANTUM-WELLS
KW - SPECTROSCOPY
KW - SPECTRA
UR - http://www.scopus.com/inward/record.url?scp=85028764511&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/aa76a0
DO - 10.1088/1361-6641/aa76a0
M3 - Article
AN - SCOPUS:85028764511
VL - 32
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 9
M1 - 095007
ER -
ID: 9915519