Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures. / Kamaev, G. N.; Cherkova, S. G.; Gismatulin, A. A. и др.
International Conference on Micro- and Nano-Electronics 2018. ред. / Vladimir F. Lukichev; Konstantin V. Rudenko. Том 11022 SPIE, 2019. 1102213 (Proceedings of SPIE; Том 11022).Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
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TY - GEN
T1 - Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures
AU - Kamaev, G. N.
AU - Cherkova, S. G.
AU - Gismatulin, A. A.
AU - Volodin, V. A.
AU - Skuratov, V. A.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - In the present study, we experimentally examined the effect of swift Xe ion irradiation of multilayer structures involving ultrathin alternating layers of SiO 2 and amorphous hydrogenated silicon (α-Si:H), and subsequent isochronal anneals of such structures, on their properties. It is shown that the action of swift heavy ions on Si/SiO 2 multilayer structures leads to the formation of Si nanoclusters. In the latter case, the multi-layer structure of the samples was retained, and the ordering of nanoclusters along ion tracks was observed. The irradiation produces nuclei which, during subsequent anneals, facilitate the formation of Si nanocrystals (Si NCs) in the dielectric layer. In the multi-layer metal-oxide-semiconductor (MOS) structures with Si NCs embedded in the dielectric matrix, a phenomenon of bipolar resistive switching was observed. On increasing the number of NC layers, during the on-off process intermediate metastable states were manifested. This observation may prove important for realization of intermediate resistance values (multi-bit data storage) and for the development of additive neuromorphic systems.
AB - In the present study, we experimentally examined the effect of swift Xe ion irradiation of multilayer structures involving ultrathin alternating layers of SiO 2 and amorphous hydrogenated silicon (α-Si:H), and subsequent isochronal anneals of such structures, on their properties. It is shown that the action of swift heavy ions on Si/SiO 2 multilayer structures leads to the formation of Si nanoclusters. In the latter case, the multi-layer structure of the samples was retained, and the ordering of nanoclusters along ion tracks was observed. The irradiation produces nuclei which, during subsequent anneals, facilitate the formation of Si nanocrystals (Si NCs) in the dielectric layer. In the multi-layer metal-oxide-semiconductor (MOS) structures with Si NCs embedded in the dielectric matrix, a phenomenon of bipolar resistive switching was observed. On increasing the number of NC layers, during the on-off process intermediate metastable states were manifested. This observation may prove important for realization of intermediate resistance values (multi-bit data storage) and for the development of additive neuromorphic systems.
KW - memristors
KW - multilayer structures
KW - silicon nanocrystals
KW - swift heavy ions
KW - IRRADIATION
KW - SUPERLATTICE
KW - PHOTOLUMINESCENCE
KW - SILICON NANOCRYSTALS
UR - http://www.scopus.com/inward/record.url?scp=85063479163&partnerID=8YFLogxK
U2 - 10.1117/12.2522161
DO - 10.1117/12.2522161
M3 - Conference contribution
AN - SCOPUS:85063479163
VL - 11022
T3 - Proceedings of SPIE
BT - International Conference on Micro- and Nano-Electronics 2018
A2 - Lukichev, Vladimir F.
A2 - Rudenko, Konstantin V.
PB - SPIE
T2 - International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018
Y2 - 1 October 2018 through 5 October 2018
ER -
ID: 19040011