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Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures. / Kamaev, G. N.; Cherkova, S. G.; Gismatulin, A. A. et al.

International Conference on Micro- and Nano-Electronics 2018. ed. / Vladimir F. Lukichev; Konstantin V. Rudenko. Vol. 11022 SPIE, 2019. 1102213 (Proceedings of SPIE; Vol. 11022).

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Harvard

Kamaev, GN, Cherkova, SG, Gismatulin, AA, Volodin, VA & Skuratov, VA 2019, Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures. in VF Lukichev & KV Rudenko (eds), International Conference on Micro- and Nano-Electronics 2018. vol. 11022, 1102213, Proceedings of SPIE, vol. 11022, SPIE, International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018, Zvenigorod, Russian Federation, 01.10.2018. https://doi.org/10.1117/12.2522161

APA

Kamaev, G. N., Cherkova, S. G., Gismatulin, A. A., Volodin, V. A., & Skuratov, V. A. (2019). Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures. In V. F. Lukichev, & K. V. Rudenko (Eds.), International Conference on Micro- and Nano-Electronics 2018 (Vol. 11022). [1102213] (Proceedings of SPIE; Vol. 11022). SPIE. https://doi.org/10.1117/12.2522161

Vancouver

Kamaev GN, Cherkova SG, Gismatulin AA, Volodin VA, Skuratov VA. Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures. In Lukichev VF, Rudenko KV, editors, International Conference on Micro- and Nano-Electronics 2018. Vol. 11022. SPIE. 2019. 1102213. (Proceedings of SPIE). doi: 10.1117/12.2522161

Author

Kamaev, G. N. ; Cherkova, S. G. ; Gismatulin, A. A. et al. / Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures. International Conference on Micro- and Nano-Electronics 2018. editor / Vladimir F. Lukichev ; Konstantin V. Rudenko. Vol. 11022 SPIE, 2019. (Proceedings of SPIE).

BibTeX

@inproceedings{4c38fe0527d9444c9ea89a2d4d236dd9,
title = "Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures",
abstract = " In the present study, we experimentally examined the effect of swift Xe ion irradiation of multilayer structures involving ultrathin alternating layers of SiO 2 and amorphous hydrogenated silicon (α-Si:H), and subsequent isochronal anneals of such structures, on their properties. It is shown that the action of swift heavy ions on Si/SiO 2 multilayer structures leads to the formation of Si nanoclusters. In the latter case, the multi-layer structure of the samples was retained, and the ordering of nanoclusters along ion tracks was observed. The irradiation produces nuclei which, during subsequent anneals, facilitate the formation of Si nanocrystals (Si NCs) in the dielectric layer. In the multi-layer metal-oxide-semiconductor (MOS) structures with Si NCs embedded in the dielectric matrix, a phenomenon of bipolar resistive switching was observed. On increasing the number of NC layers, during the on-off process intermediate metastable states were manifested. This observation may prove important for realization of intermediate resistance values (multi-bit data storage) and for the development of additive neuromorphic systems. ",
keywords = "memristors, multilayer structures, silicon nanocrystals, swift heavy ions, IRRADIATION, SUPERLATTICE, PHOTOLUMINESCENCE, SILICON NANOCRYSTALS",
author = "Kamaev, {G. N.} and Cherkova, {S. G.} and Gismatulin, {A. A.} and Volodin, {V. A.} and Skuratov, {V. A.}",
year = "2019",
month = jan,
day = "1",
doi = "10.1117/12.2522161",
language = "English",
volume = "11022",
series = "Proceedings of SPIE",
publisher = "SPIE",
editor = "Lukichev, {Vladimir F.} and Rudenko, {Konstantin V.}",
booktitle = "International Conference on Micro- and Nano-Electronics 2018",
address = "United States",
note = "International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018 ; Conference date: 01-10-2018 Through 05-10-2018",

}

RIS

TY - GEN

T1 - Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures

AU - Kamaev, G. N.

AU - Cherkova, S. G.

AU - Gismatulin, A. A.

AU - Volodin, V. A.

AU - Skuratov, V. A.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - In the present study, we experimentally examined the effect of swift Xe ion irradiation of multilayer structures involving ultrathin alternating layers of SiO 2 and amorphous hydrogenated silicon (α-Si:H), and subsequent isochronal anneals of such structures, on their properties. It is shown that the action of swift heavy ions on Si/SiO 2 multilayer structures leads to the formation of Si nanoclusters. In the latter case, the multi-layer structure of the samples was retained, and the ordering of nanoclusters along ion tracks was observed. The irradiation produces nuclei which, during subsequent anneals, facilitate the formation of Si nanocrystals (Si NCs) in the dielectric layer. In the multi-layer metal-oxide-semiconductor (MOS) structures with Si NCs embedded in the dielectric matrix, a phenomenon of bipolar resistive switching was observed. On increasing the number of NC layers, during the on-off process intermediate metastable states were manifested. This observation may prove important for realization of intermediate resistance values (multi-bit data storage) and for the development of additive neuromorphic systems.

AB - In the present study, we experimentally examined the effect of swift Xe ion irradiation of multilayer structures involving ultrathin alternating layers of SiO 2 and amorphous hydrogenated silicon (α-Si:H), and subsequent isochronal anneals of such structures, on their properties. It is shown that the action of swift heavy ions on Si/SiO 2 multilayer structures leads to the formation of Si nanoclusters. In the latter case, the multi-layer structure of the samples was retained, and the ordering of nanoclusters along ion tracks was observed. The irradiation produces nuclei which, during subsequent anneals, facilitate the formation of Si nanocrystals (Si NCs) in the dielectric layer. In the multi-layer metal-oxide-semiconductor (MOS) structures with Si NCs embedded in the dielectric matrix, a phenomenon of bipolar resistive switching was observed. On increasing the number of NC layers, during the on-off process intermediate metastable states were manifested. This observation may prove important for realization of intermediate resistance values (multi-bit data storage) and for the development of additive neuromorphic systems.

KW - memristors

KW - multilayer structures

KW - silicon nanocrystals

KW - swift heavy ions

KW - IRRADIATION

KW - SUPERLATTICE

KW - PHOTOLUMINESCENCE

KW - SILICON NANOCRYSTALS

UR - http://www.scopus.com/inward/record.url?scp=85063479163&partnerID=8YFLogxK

U2 - 10.1117/12.2522161

DO - 10.1117/12.2522161

M3 - Conference contribution

AN - SCOPUS:85063479163

VL - 11022

T3 - Proceedings of SPIE

BT - International Conference on Micro- and Nano-Electronics 2018

A2 - Lukichev, Vladimir F.

A2 - Rudenko, Konstantin V.

PB - SPIE

T2 - International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018

Y2 - 1 October 2018 through 5 October 2018

ER -

ID: 19040011