TY - JOUR

T1 - Raman scattering study of nanoscale Mo/Si and Mo/Be periodic multilayer structures

AU - Kumar, Niranjan

AU - Volodin, Vladimir A.

AU - Smertin, Ruslan M.

AU - Yunin, Pavel A.

AU - Polkovnoikov, Vladimir N.

AU - Panda, Kalpataru

AU - Nechay, Andrey N.

AU - Chkhalo, Nikolay I.

N1 - Publisher Copyright: © 2020 Author(s). Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/12/1

Y1 - 2020/12/1

N2 - Investigation of the microstructure and phase analysis of the periodic Mo/Si and Mo/Be multilayers are essential for depositing high reflective multilayers that operate at soft x-ray to extreme ultraviolet radiations. Raman spectroscopy revealed the presence of an amorphous phase of silicon (Si) in the Mo/Si multilayers. Furthermore, the disorder of the amorphous Si phase was increased with decreasing the periodic thickness of the Si layers in the nanoscale Mo/Si multilayers. The polycrystalline Mo periodic layers coexisted with the amorphous silicon layers in the Mo/Si multilayers. In contrast, both the Mo and Be layers in the Mo/Be periodic multilayers were condensed into the polycrystalline phases. At higher annealing temperatures, the polycrystalline and amorphous phases in both the Mo/Si and Mo/Be multilayers were destroyed due to the extensive interdiffusion process. However, the amorphous Si phase was partially preserved due to the formation of crystalline intermetallic h-MoSi2 and t-MoSi2 phases, for critically thicker Si layers in periodic Mo/Si multilayers.

AB - Investigation of the microstructure and phase analysis of the periodic Mo/Si and Mo/Be multilayers are essential for depositing high reflective multilayers that operate at soft x-ray to extreme ultraviolet radiations. Raman spectroscopy revealed the presence of an amorphous phase of silicon (Si) in the Mo/Si multilayers. Furthermore, the disorder of the amorphous Si phase was increased with decreasing the periodic thickness of the Si layers in the nanoscale Mo/Si multilayers. The polycrystalline Mo periodic layers coexisted with the amorphous silicon layers in the Mo/Si multilayers. In contrast, both the Mo and Be layers in the Mo/Be periodic multilayers were condensed into the polycrystalline phases. At higher annealing temperatures, the polycrystalline and amorphous phases in both the Mo/Si and Mo/Be multilayers were destroyed due to the extensive interdiffusion process. However, the amorphous Si phase was partially preserved due to the formation of crystalline intermetallic h-MoSi2 and t-MoSi2 phases, for critically thicker Si layers in periodic Mo/Si multilayers.

KW - SOFT-X-RAY

KW - PHASE-FORMATION

KW - A-SI

KW - MIRRORS

KW - BERYLLIUM

KW - SPECTRA

KW - REFLECTIVITY

KW - BARRIER

KW - MICROSTRUCTURE

KW - LITHOGRAPHY

UR - http://www.scopus.com/inward/record.url?scp=85093986242&partnerID=8YFLogxK

U2 - 10.1116/6.0000408

DO - 10.1116/6.0000408

M3 - Article

AN - SCOPUS:85093986242

VL - 38

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

SN - 0734-2101

IS - 6

M1 - 063408

ER -