Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Raman scattering and photoluminescence in In+ and As+ ion-implanted SiO2 layers encapsulated with Si3N4. / Tyschenko, Ida; Si, Zhongbin; Volodin, Vladimir и др.
в: Physica B: Condensed Matter, Том 667, 415201, 15.10.2023.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Raman scattering and photoluminescence in In+ and As+ ion-implanted SiO2 layers encapsulated with Si3N4
AU - Tyschenko, Ida
AU - Si, Zhongbin
AU - Volodin, Vladimir
AU - Cherkova, Svetlana
AU - Popov, Vladimir
N1 - Acknowledgements: We are grateful to P.L. Smirnov for the As+ ion implantation, to V.K. Vasil’ev and Dr. A.N. Mikhaylov (Lobachevsky University, Nizhny Novgorod, Russia) for the In+ ion implantation and to Dr. G.N. Kamaev for the Si3N4 film deposition. The Raman spectra were recorded on the equipment of the shared facilities High Technologies and Analytics of Nanosystems of the Novosibirsk State University (CKP VTAN NSU). The study was supported by the Ministry of Education and Science of the Russian Federation [Project N◦ 0242-2021-0003].
PY - 2023/10/15
Y1 - 2023/10/15
N2 - Raman and photoluminescence spectra were investigated in the In+ and As+ ion-implanted SiO2 films encapsulated with Si3N4 layers as a function of annealing temperature. The optical phonon frequency, as a function of the InAs nanocrystal size, was also calculated within the confined phonon model. The Raman scattering band of around 231 cm−1, close to the low-frequency shifted longitudinal optical phonon mode in the InAs matrix, was observed as the annealing temperature increased to 900 °C. The InAs nanocrystal size of 3 nm was estimated. The strong room-temperature photoluminescence peaking at 550 nm (2.25 eV) was also obtained under the 473 nm wavelength excitation. Its intensity reached a maximum value as the annealing temperature increased to 1000 °C. Its peak position was blue-shifted as the excitation wavelength decreased. The direct irradiative electron and hole recombination in the InAs nanocrystals was proposed as a possible mechanism of this photoluminescence.
AB - Raman and photoluminescence spectra were investigated in the In+ and As+ ion-implanted SiO2 films encapsulated with Si3N4 layers as a function of annealing temperature. The optical phonon frequency, as a function of the InAs nanocrystal size, was also calculated within the confined phonon model. The Raman scattering band of around 231 cm−1, close to the low-frequency shifted longitudinal optical phonon mode in the InAs matrix, was observed as the annealing temperature increased to 900 °C. The InAs nanocrystal size of 3 nm was estimated. The strong room-temperature photoluminescence peaking at 550 nm (2.25 eV) was also obtained under the 473 nm wavelength excitation. Its intensity reached a maximum value as the annealing temperature increased to 1000 °C. Its peak position was blue-shifted as the excitation wavelength decreased. The direct irradiative electron and hole recombination in the InAs nanocrystals was proposed as a possible mechanism of this photoluminescence.
KW - InAs
KW - Ion implantation
KW - Nanocrystals
KW - Photoluminescence
KW - Raman
KW - SiO2
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85167607143&origin=inward&txGid=5a0273d98fa9cb89034b02d89231b815
UR - https://www.mendeley.com/catalogue/d7ac5cd5-ceb5-37b6-94e5-f6ee4efb65ba/
U2 - 10.1016/j.physb.2023.415201
DO - 10.1016/j.physb.2023.415201
M3 - Article
VL - 667
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
M1 - 415201
ER -
ID: 55446908