TY - JOUR

T1 - Raman scattering and photoluminescence in In+ and As+ ion-implanted SiO2 layers encapsulated with Si3N4

AU - Tyschenko, Ida

AU - Si, Zhongbin

AU - Volodin, Vladimir

AU - Cherkova, Svetlana

AU - Popov, Vladimir

N1 - Acknowledgements: We are grateful to P.L. Smirnov for the As+ ion implantation, to V.K. Vasil’ev and Dr. A.N. Mikhaylov (Lobachevsky University, Nizhny Novgorod, Russia) for the In+ ion implantation and to Dr. G.N. Kamaev for the Si3N4 film deposition. The Raman spectra were recorded on the equipment of the shared facilities High Technologies and Analytics of Nanosystems of the Novosibirsk State University (CKP VTAN NSU). The study was supported by the Ministry of Education and Science of the Russian Federation [Project N◦ 0242-2021-0003].

PY - 2023/10/15

Y1 - 2023/10/15

N2 - Raman and photoluminescence spectra were investigated in the In+ and As+ ion-implanted SiO2 films encapsulated with Si3N4 layers as a function of annealing temperature. The optical phonon frequency, as a function of the InAs nanocrystal size, was also calculated within the confined phonon model. The Raman scattering band of around 231 cm−1, close to the low-frequency shifted longitudinal optical phonon mode in the InAs matrix, was observed as the annealing temperature increased to 900 °C. The InAs nanocrystal size of 3 nm was estimated. The strong room-temperature photoluminescence peaking at 550 nm (2.25 eV) was also obtained under the 473 nm wavelength excitation. Its intensity reached a maximum value as the annealing temperature increased to 1000 °C. Its peak position was blue-shifted as the excitation wavelength decreased. The direct irradiative electron and hole recombination in the InAs nanocrystals was proposed as a possible mechanism of this photoluminescence.

AB - Raman and photoluminescence spectra were investigated in the In+ and As+ ion-implanted SiO2 films encapsulated with Si3N4 layers as a function of annealing temperature. The optical phonon frequency, as a function of the InAs nanocrystal size, was also calculated within the confined phonon model. The Raman scattering band of around 231 cm−1, close to the low-frequency shifted longitudinal optical phonon mode in the InAs matrix, was observed as the annealing temperature increased to 900 °C. The InAs nanocrystal size of 3 nm was estimated. The strong room-temperature photoluminescence peaking at 550 nm (2.25 eV) was also obtained under the 473 nm wavelength excitation. Its intensity reached a maximum value as the annealing temperature increased to 1000 °C. Its peak position was blue-shifted as the excitation wavelength decreased. The direct irradiative electron and hole recombination in the InAs nanocrystals was proposed as a possible mechanism of this photoluminescence.

KW - InAs

KW - Ion implantation

KW - Nanocrystals

KW - Photoluminescence

KW - Raman

KW - SiO2

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85167607143&origin=inward&txGid=5a0273d98fa9cb89034b02d89231b815

UR - https://www.mendeley.com/catalogue/d7ac5cd5-ceb5-37b6-94e5-f6ee4efb65ba/

U2 - 10.1016/j.physb.2023.415201

DO - 10.1016/j.physb.2023.415201

M3 - Article

VL - 667

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

M1 - 415201

ER -