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Radiation-Induced epitaxial CaSi2 film growth at the molecular-beam epitaxy of CaF2 on Si. / Kacyuba, Aleksey V.; Dvurechenskii, Anatoly V.; Kamaev, Gennady N. и др.

в: Materials Letters, Том 268, 127554, 01.06.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kacyuba, AV, Dvurechenskii, AV, Kamaev, GN, Volodin, VA & Krupin, AY 2020, 'Radiation-Induced epitaxial CaSi2 film growth at the molecular-beam epitaxy of CaF2 on Si', Materials Letters, Том. 268, 127554. https://doi.org/10.1016/j.matlet.2020.127554

APA

Kacyuba, A. V., Dvurechenskii, A. V., Kamaev, G. N., Volodin, V. A., & Krupin, A. Y. (2020). Radiation-Induced epitaxial CaSi2 film growth at the molecular-beam epitaxy of CaF2 on Si. Materials Letters, 268, [127554]. https://doi.org/10.1016/j.matlet.2020.127554

Vancouver

Kacyuba AV, Dvurechenskii AV, Kamaev GN, Volodin VA, Krupin AY. Radiation-Induced epitaxial CaSi2 film growth at the molecular-beam epitaxy of CaF2 on Si. Materials Letters. 2020 июнь 1;268:127554. doi: 10.1016/j.matlet.2020.127554

Author

Kacyuba, Aleksey V. ; Dvurechenskii, Anatoly V. ; Kamaev, Gennady N. и др. / Radiation-Induced epitaxial CaSi2 film growth at the molecular-beam epitaxy of CaF2 on Si. в: Materials Letters. 2020 ; Том 268.

BibTeX

@article{89f17bf6bf384fb4b0bc540205266f01,
title = "Radiation-Induced epitaxial CaSi2 film growth at the molecular-beam epitaxy of CaF2 on Si",
abstract = "We report on the studies of the 20 keV electron-beam irradiation (current density 50 μA/m2) effects on the epitaxial CaF2 film growth on a Si surface. It was found that, during the CaF2 growth on Si, the area exposed to the electron beam suffers strong modifications, such as in the surface morphology and film chemical composition. With reflection high-energy electron diffraction, atomic force microscopy and Raman spectroscopy, it is shown that the electron beam action leads to the CaSi2 layer synthesis at the interface of the silicon substrate and epitaxially growing CaF2 film.",
keywords = "CaF, CaSi, Electron-beam irradiation, Fluorine desorption, Molecular-Beam Epitaxy, Raman spectroscopy, CaSi2, FILMS, ELECTRON-BEAM, CaF2, LAYERS",
author = "Kacyuba, {Aleksey V.} and Dvurechenskii, {Anatoly V.} and Kamaev, {Gennady N.} and Volodin, {Vladimir A.} and Krupin, {Aleksey Y.}",
note = "Funding Information: The work was funded by Russian Science Foundation (grant 19-12-00070 ).The authors are grateful to the Collective-Use Center “High Technologies and Analytics of Nanosystems” (Novosibirsk State University) for the provided measurements of Raman spectra. Publisher Copyright: {\textcopyright} 2020 Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
month = jun,
day = "1",
doi = "10.1016/j.matlet.2020.127554",
language = "English",
volume = "268",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Radiation-Induced epitaxial CaSi2 film growth at the molecular-beam epitaxy of CaF2 on Si

AU - Kacyuba, Aleksey V.

AU - Dvurechenskii, Anatoly V.

AU - Kamaev, Gennady N.

AU - Volodin, Vladimir A.

AU - Krupin, Aleksey Y.

N1 - Funding Information: The work was funded by Russian Science Foundation (grant 19-12-00070 ).The authors are grateful to the Collective-Use Center “High Technologies and Analytics of Nanosystems” (Novosibirsk State University) for the provided measurements of Raman spectra. Publisher Copyright: © 2020 Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/6/1

Y1 - 2020/6/1

N2 - We report on the studies of the 20 keV electron-beam irradiation (current density 50 μA/m2) effects on the epitaxial CaF2 film growth on a Si surface. It was found that, during the CaF2 growth on Si, the area exposed to the electron beam suffers strong modifications, such as in the surface morphology and film chemical composition. With reflection high-energy electron diffraction, atomic force microscopy and Raman spectroscopy, it is shown that the electron beam action leads to the CaSi2 layer synthesis at the interface of the silicon substrate and epitaxially growing CaF2 film.

AB - We report on the studies of the 20 keV electron-beam irradiation (current density 50 μA/m2) effects on the epitaxial CaF2 film growth on a Si surface. It was found that, during the CaF2 growth on Si, the area exposed to the electron beam suffers strong modifications, such as in the surface morphology and film chemical composition. With reflection high-energy electron diffraction, atomic force microscopy and Raman spectroscopy, it is shown that the electron beam action leads to the CaSi2 layer synthesis at the interface of the silicon substrate and epitaxially growing CaF2 film.

KW - CaF

KW - CaSi

KW - Electron-beam irradiation

KW - Fluorine desorption

KW - Molecular-Beam Epitaxy

KW - Raman spectroscopy

KW - CaSi2

KW - FILMS

KW - ELECTRON-BEAM

KW - CaF2

KW - LAYERS

UR - http://www.scopus.com/inward/record.url?scp=85080074127&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2020.127554

DO - 10.1016/j.matlet.2020.127554

M3 - Article

AN - SCOPUS:85080074127

VL - 268

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

M1 - 127554

ER -

ID: 23665848