Research output: Contribution to journal › Article › peer-review
Radiation-Induced epitaxial CaSi2 film growth at the molecular-beam epitaxy of CaF2 on Si. / Kacyuba, Aleksey V.; Dvurechenskii, Anatoly V.; Kamaev, Gennady N. et al.
In: Materials Letters, Vol. 268, 127554, 01.06.2020.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Radiation-Induced epitaxial CaSi2 film growth at the molecular-beam epitaxy of CaF2 on Si
AU - Kacyuba, Aleksey V.
AU - Dvurechenskii, Anatoly V.
AU - Kamaev, Gennady N.
AU - Volodin, Vladimir A.
AU - Krupin, Aleksey Y.
N1 - Funding Information: The work was funded by Russian Science Foundation (grant 19-12-00070 ).The authors are grateful to the Collective-Use Center “High Technologies and Analytics of Nanosystems” (Novosibirsk State University) for the provided measurements of Raman spectra. Publisher Copyright: © 2020 Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/6/1
Y1 - 2020/6/1
N2 - We report on the studies of the 20 keV electron-beam irradiation (current density 50 μA/m2) effects on the epitaxial CaF2 film growth on a Si surface. It was found that, during the CaF2 growth on Si, the area exposed to the electron beam suffers strong modifications, such as in the surface morphology and film chemical composition. With reflection high-energy electron diffraction, atomic force microscopy and Raman spectroscopy, it is shown that the electron beam action leads to the CaSi2 layer synthesis at the interface of the silicon substrate and epitaxially growing CaF2 film.
AB - We report on the studies of the 20 keV electron-beam irradiation (current density 50 μA/m2) effects on the epitaxial CaF2 film growth on a Si surface. It was found that, during the CaF2 growth on Si, the area exposed to the electron beam suffers strong modifications, such as in the surface morphology and film chemical composition. With reflection high-energy electron diffraction, atomic force microscopy and Raman spectroscopy, it is shown that the electron beam action leads to the CaSi2 layer synthesis at the interface of the silicon substrate and epitaxially growing CaF2 film.
KW - CaF
KW - CaSi
KW - Electron-beam irradiation
KW - Fluorine desorption
KW - Molecular-Beam Epitaxy
KW - Raman spectroscopy
KW - CaSi2
KW - FILMS
KW - ELECTRON-BEAM
KW - CaF2
KW - LAYERS
UR - http://www.scopus.com/inward/record.url?scp=85080074127&partnerID=8YFLogxK
U2 - 10.1016/j.matlet.2020.127554
DO - 10.1016/j.matlet.2020.127554
M3 - Article
AN - SCOPUS:85080074127
VL - 268
JO - Materials Letters
JF - Materials Letters
SN - 0167-577X
M1 - 127554
ER -
ID: 23665848