TY - JOUR

T1 - Photovoltaic Effect in ITO/Germanosilicate Glass/Si Structures

AU - Volodin, V. A.

AU - Kamaev, G. N.

AU - Hamoud, Ghaithaa A.

AU - Yushkov, I. D.

AU - Vergnat, M.

N1 - The work was supported by the Russian Science Foundation, project no. 22-19-00369. Публикация для корректировки.

PY - 2023/12

Y1 - 2023/12

N2 - MIS structures with a nonstoichiometric oxide dielectric and a transparent top electrode are attracting attention for use as low-cost Schottky-diode-based solar cells, photodetectors, and photomemristors. Previously, attempts were made to use both thin tunnel layers of silicon oxide or rather thick silicon-rich oxides for these purposes. This work is the first attempt to use films of nonstoichiometric germanosilicate films in photosensitive MIS structures.

AB - MIS structures with a nonstoichiometric oxide dielectric and a transparent top electrode are attracting attention for use as low-cost Schottky-diode-based solar cells, photodetectors, and photomemristors. Previously, attempts were made to use both thin tunnel layers of silicon oxide or rather thick silicon-rich oxides for these purposes. This work is the first attempt to use films of nonstoichiometric germanosilicate films in photosensitive MIS structures.

KW - MIS structures

KW - germanosilicate glass films

KW - photocurrent

KW - photovoltaic effect

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85188517436&origin=inward&txGid=11c3cf1138edf73bd3f7a2f994b36834

UR - https://www.mendeley.com/catalogue/b3335509-1200-3ab3-a5ce-4499ab47b883/

U2 - 10.1134/S1063739723600206

DO - 10.1134/S1063739723600206

M3 - Article

VL - 52

SP - S84-S91

JO - Russian Microelectronics

JF - Russian Microelectronics

SN - 1063-7397

IS - Suppl 1

ER -