Standard

Photovoltaic Effect in ITO/Germanosilicate Glass/Si Structures. / Volodin, V. A.; Kamaev, G. N.; Hamoud, Ghaithaa A. et al.

In: Russian Microelectronics, Vol. 52, No. Suppl 1, 12.2023, p. S84-S91.

Research output: Contribution to journal › Article › peer-review

Harvard

Volodin, VA, Kamaev, GN, Hamoud, GA, Yushkov, ID & Vergnat, M 2023, 'Photovoltaic Effect in ITO/Germanosilicate Glass/Si Structures', Russian Microelectronics, vol. 52, no. Suppl 1, pp. S84-S91. https://doi.org/10.1134/S1063739723600206

APA

Volodin, V. A., Kamaev, G. N., Hamoud, G. A., Yushkov, I. D., & Vergnat, M. (2023). Photovoltaic Effect in ITO/Germanosilicate Glass/Si Structures. Russian Microelectronics, 52(Suppl 1), S84-S91. https://doi.org/10.1134/S1063739723600206

Vancouver

Volodin VA, Kamaev GN, Hamoud GA, Yushkov ID, Vergnat M. Photovoltaic Effect in ITO/Germanosilicate Glass/Si Structures. Russian Microelectronics. 2023 Dec;52(Suppl 1):S84-S91. doi: 10.1134/S1063739723600206

Author

Volodin, V. A. ; Kamaev, G. N. ; Hamoud, Ghaithaa A. et al. / Photovoltaic Effect in ITO/Germanosilicate Glass/Si Structures. In: Russian Microelectronics. 2023 ; Vol. 52, No. Suppl 1. pp. S84-S91.

BibTeX

@article{bce5fbdcdf2042049c6a94f5f72b8560,
title = "Photovoltaic Effect in ITO/Germanosilicate Glass/Si Structures",
abstract = "MIS structures with a nonstoichiometric oxide dielectric and a transparent top electrode are attracting attention for use as low-cost Schottky-diode-based solar cells, photodetectors, and photomemristors. Previously, attempts were made to use both thin tunnel layers of silicon oxide or rather thick silicon-rich oxides for these purposes. This work is the first attempt to use films of nonstoichiometric germanosilicate films in photosensitive MIS structures.",
keywords = "MIS structures, germanosilicate glass films, photocurrent, photovoltaic effect",
author = "Volodin, {V. A.} and Kamaev, {G. N.} and Hamoud, {Ghaithaa A.} and Yushkov, {I. D.} and M. Vergnat",
note = "The work was supported by the Russian Science Foundation, project no. 22-19-00369. Публикация для корректировки.",
year = "2023",
month = dec,
doi = "10.1134/S1063739723600206",
language = "English",
volume = "52",
pages = "S84--S91",
journal = "Russian Microelectronics",
issn = "1063-7397",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "Suppl 1",

}

RIS

TY - JOUR

T1 - Photovoltaic Effect in ITO/Germanosilicate Glass/Si Structures

AU - Volodin, V. A.

AU - Kamaev, G. N.

AU - Hamoud, Ghaithaa A.

AU - Yushkov, I. D.

AU - Vergnat, M.

N1 - The work was supported by the Russian Science Foundation, project no. 22-19-00369. Публикация для корректировки.

PY - 2023/12

Y1 - 2023/12

N2 - MIS structures with a nonstoichiometric oxide dielectric and a transparent top electrode are attracting attention for use as low-cost Schottky-diode-based solar cells, photodetectors, and photomemristors. Previously, attempts were made to use both thin tunnel layers of silicon oxide or rather thick silicon-rich oxides for these purposes. This work is the first attempt to use films of nonstoichiometric germanosilicate films in photosensitive MIS structures.

AB - MIS structures with a nonstoichiometric oxide dielectric and a transparent top electrode are attracting attention for use as low-cost Schottky-diode-based solar cells, photodetectors, and photomemristors. Previously, attempts were made to use both thin tunnel layers of silicon oxide or rather thick silicon-rich oxides for these purposes. This work is the first attempt to use films of nonstoichiometric germanosilicate films in photosensitive MIS structures.

KW - MIS structures

KW - germanosilicate glass films

KW - photocurrent

KW - photovoltaic effect

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85188517436&origin=inward&txGid=11c3cf1138edf73bd3f7a2f994b36834

UR - https://www.mendeley.com/catalogue/b3335509-1200-3ab3-a5ce-4499ab47b883/

U2 - 10.1134/S1063739723600206

DO - 10.1134/S1063739723600206

M3 - Article

VL - 52

SP - S84-S91

JO - Russian Microelectronics

JF - Russian Microelectronics

SN - 1063-7397

IS - Suppl 1

ER -

ID: 59888365