TY - JOUR

T1 - Influence of Current Density on the Structure of Amorphous Silicon Suboxide Thin Films Under Electron-Beam Annealing

AU - Baranov, E. A.

AU - Nepomnyashchikh, V. A.

AU - Konstantinov, V. O.

AU - Shchukin, V. G.

AU - Merkulova, I. E.

AU - Zamchiy, A. O.

AU - Lunev, N. A.

AU - Volodin, V. A.

AU - Shapovalova, A. A.

N1 - This work was supported by the Russian Science Foundation (Project No. 22-79-10079) (diagnostics of thin films) and State assignment of the Institute of Thermophysics SB RAS No. AAAA-A19-119061490008-3 (synthesis and annealing of thin films). Thin films were synthesized using the unique scientific facility “Vacuum gas-dynamic complex" of the Institute of Thermophysics SB RAS. Equipment for recording Raman spectra was provided by the Shared-Use Center “VTAN" of Novosibirsk State University, and the equipment for recording spectra in the IR range by the Shared-Use Center of the Institute of Inorganic Chemistry SB RAS. Публикация для корректировки.

PY - 2023/10

Y1 - 2023/10

N2 - Electron-beam annealing of an amorphous silicon suboxide thin film with a stoichiometric coefficient of 0.5 was carried out in a vacuum chamber. The exposure time was 10 min at an accelerating electron-beam voltage of 1000 V and a current strength of 75 mA. Using probe measurements and calculations, the current density distribution over the electron-beam cross section was obtained assuming a normal distribution. The current density on the beam axis was 0.8 mA/mm2. The electron-beam annealing of the amorphous silicon suboxide thin film led to the formation of crystalline silicon nanoparticles with a size of (Formula presented.)nm. The crystallite sizes did not depend on the electron-beam current density, in contrast to the degree of crystallinity, which decreased from 40% on the beam axis to zero (amorphous structure) on the periphery. It is suggested that during the formation of nanocrystalline silicon, a liquid phase is formed.

AB - Electron-beam annealing of an amorphous silicon suboxide thin film with a stoichiometric coefficient of 0.5 was carried out in a vacuum chamber. The exposure time was 10 min at an accelerating electron-beam voltage of 1000 V and a current strength of 75 mA. Using probe measurements and calculations, the current density distribution over the electron-beam cross section was obtained assuming a normal distribution. The current density on the beam axis was 0.8 mA/mm2. The electron-beam annealing of the amorphous silicon suboxide thin film led to the formation of crystalline silicon nanoparticles with a size of (Formula presented.)nm. The crystallite sizes did not depend on the electron-beam current density, in contrast to the degree of crystallinity, which decreased from 40% on the beam axis to zero (amorphous structure) on the periphery. It is suggested that during the formation of nanocrystalline silicon, a liquid phase is formed.

KW - electron beam annealing

KW - electron beam current density

KW - nanocrystalline silicon

KW - non-stoichiometric silicon oxide

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85182479214&origin=inward&txGid=ed7043e6ff5c48faa6563af73a8f8ef4

UR - https://www.mendeley.com/catalogue/a5bce226-f42e-378c-aec5-5401c23a454f/

U2 - 10.1134/S0021894423050061

DO - 10.1134/S0021894423050061

M3 - Article

VL - 64

SP - 778

EP - 783

JO - Journal of Applied Mechanics and Technical Physics

JF - Journal of Applied Mechanics and Technical Physics

SN - 0021-8944

IS - 5

ER -