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Influence of Current Density on the Structure of Amorphous Silicon Suboxide Thin Films Under Electron-Beam Annealing. / Baranov, E. A.; Nepomnyashchikh, V. A.; Konstantinov, V. O. et al.

In: Journal of Applied Mechanics and Technical Physics, Vol. 64, No. 5, 10.2023, p. 778-783.

Research output: Contribution to journalArticlepeer-review

Harvard

Baranov, EA, Nepomnyashchikh, VA, Konstantinov, VO, Shchukin, VG, Merkulova, IE, Zamchiy, AO, Lunev, NA, Volodin, VA & Shapovalova, AA 2023, 'Influence of Current Density on the Structure of Amorphous Silicon Suboxide Thin Films Under Electron-Beam Annealing', Journal of Applied Mechanics and Technical Physics, vol. 64, no. 5, pp. 778-783. https://doi.org/10.1134/S0021894423050061

APA

Baranov, E. A., Nepomnyashchikh, V. A., Konstantinov, V. O., Shchukin, V. G., Merkulova, I. E., Zamchiy, A. O., Lunev, N. A., Volodin, V. A., & Shapovalova, A. A. (2023). Influence of Current Density on the Structure of Amorphous Silicon Suboxide Thin Films Under Electron-Beam Annealing. Journal of Applied Mechanics and Technical Physics, 64(5), 778-783. https://doi.org/10.1134/S0021894423050061

Vancouver

Baranov EA, Nepomnyashchikh VA, Konstantinov VO, Shchukin VG, Merkulova IE, Zamchiy AO et al. Influence of Current Density on the Structure of Amorphous Silicon Suboxide Thin Films Under Electron-Beam Annealing. Journal of Applied Mechanics and Technical Physics. 2023 Oct;64(5):778-783. doi: 10.1134/S0021894423050061

Author

Baranov, E. A. ; Nepomnyashchikh, V. A. ; Konstantinov, V. O. et al. / Influence of Current Density on the Structure of Amorphous Silicon Suboxide Thin Films Under Electron-Beam Annealing. In: Journal of Applied Mechanics and Technical Physics. 2023 ; Vol. 64, No. 5. pp. 778-783.

BibTeX

@article{c8b46a6574f24a6393ca900a9436c018,
title = "Influence of Current Density on the Structure of Amorphous Silicon Suboxide Thin Films Under Electron-Beam Annealing",
abstract = "Electron-beam annealing of an amorphous silicon suboxide thin film with a stoichiometric coefficient of 0.5 was carried out in a vacuum chamber. The exposure time was 10 min at an accelerating electron-beam voltage of 1000 V and a current strength of 75 mA. Using probe measurements and calculations, the current density distribution over the electron-beam cross section was obtained assuming a normal distribution. The current density on the beam axis was 0.8 mA/mm2. The electron-beam annealing of the amorphous silicon suboxide thin film led to the formation of crystalline silicon nanoparticles with a size of (Formula presented.)nm. The crystallite sizes did not depend on the electron-beam current density, in contrast to the degree of crystallinity, which decreased from 40% on the beam axis to zero (amorphous structure) on the periphery. It is suggested that during the formation of nanocrystalline silicon, a liquid phase is formed.",
keywords = "electron beam annealing, electron beam current density, nanocrystalline silicon, non-stoichiometric silicon oxide",
author = "Baranov, {E. A.} and Nepomnyashchikh, {V. A.} and Konstantinov, {V. O.} and Shchukin, {V. G.} and Merkulova, {I. E.} and Zamchiy, {A. O.} and Lunev, {N. A.} and Volodin, {V. A.} and Shapovalova, {A. A.}",
note = "This work was supported by the Russian Science Foundation (Project No. 22-79-10079) (diagnostics of thin films) and State assignment of the Institute of Thermophysics SB RAS No. AAAA-A19-119061490008-3 (synthesis and annealing of thin films). Thin films were synthesized using the unique scientific facility “Vacuum gas-dynamic complex{"} of the Institute of Thermophysics SB RAS. Equipment for recording Raman spectra was provided by the Shared-Use Center “VTAN{"} of Novosibirsk State University, and the equipment for recording spectra in the IR range by the Shared-Use Center of the Institute of Inorganic Chemistry SB RAS. Публикация для корректировки.",
year = "2023",
month = oct,
doi = "10.1134/S0021894423050061",
language = "English",
volume = "64",
pages = "778--783",
journal = "Journal of Applied Mechanics and Technical Physics",
issn = "0021-8944",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "5",

}

RIS

TY - JOUR

T1 - Influence of Current Density on the Structure of Amorphous Silicon Suboxide Thin Films Under Electron-Beam Annealing

AU - Baranov, E. A.

AU - Nepomnyashchikh, V. A.

AU - Konstantinov, V. O.

AU - Shchukin, V. G.

AU - Merkulova, I. E.

AU - Zamchiy, A. O.

AU - Lunev, N. A.

AU - Volodin, V. A.

AU - Shapovalova, A. A.

N1 - This work was supported by the Russian Science Foundation (Project No. 22-79-10079) (diagnostics of thin films) and State assignment of the Institute of Thermophysics SB RAS No. AAAA-A19-119061490008-3 (synthesis and annealing of thin films). Thin films were synthesized using the unique scientific facility “Vacuum gas-dynamic complex" of the Institute of Thermophysics SB RAS. Equipment for recording Raman spectra was provided by the Shared-Use Center “VTAN" of Novosibirsk State University, and the equipment for recording spectra in the IR range by the Shared-Use Center of the Institute of Inorganic Chemistry SB RAS. Публикация для корректировки.

PY - 2023/10

Y1 - 2023/10

N2 - Electron-beam annealing of an amorphous silicon suboxide thin film with a stoichiometric coefficient of 0.5 was carried out in a vacuum chamber. The exposure time was 10 min at an accelerating electron-beam voltage of 1000 V and a current strength of 75 mA. Using probe measurements and calculations, the current density distribution over the electron-beam cross section was obtained assuming a normal distribution. The current density on the beam axis was 0.8 mA/mm2. The electron-beam annealing of the amorphous silicon suboxide thin film led to the formation of crystalline silicon nanoparticles with a size of (Formula presented.)nm. The crystallite sizes did not depend on the electron-beam current density, in contrast to the degree of crystallinity, which decreased from 40% on the beam axis to zero (amorphous structure) on the periphery. It is suggested that during the formation of nanocrystalline silicon, a liquid phase is formed.

AB - Electron-beam annealing of an amorphous silicon suboxide thin film with a stoichiometric coefficient of 0.5 was carried out in a vacuum chamber. The exposure time was 10 min at an accelerating electron-beam voltage of 1000 V and a current strength of 75 mA. Using probe measurements and calculations, the current density distribution over the electron-beam cross section was obtained assuming a normal distribution. The current density on the beam axis was 0.8 mA/mm2. The electron-beam annealing of the amorphous silicon suboxide thin film led to the formation of crystalline silicon nanoparticles with a size of (Formula presented.)nm. The crystallite sizes did not depend on the electron-beam current density, in contrast to the degree of crystallinity, which decreased from 40% on the beam axis to zero (amorphous structure) on the periphery. It is suggested that during the formation of nanocrystalline silicon, a liquid phase is formed.

KW - electron beam annealing

KW - electron beam current density

KW - nanocrystalline silicon

KW - non-stoichiometric silicon oxide

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85182479214&origin=inward&txGid=ed7043e6ff5c48faa6563af73a8f8ef4

UR - https://www.mendeley.com/catalogue/a5bce226-f42e-378c-aec5-5401c23a454f/

U2 - 10.1134/S0021894423050061

DO - 10.1134/S0021894423050061

M3 - Article

VL - 64

SP - 778

EP - 783

JO - Journal of Applied Mechanics and Technical Physics

JF - Journal of Applied Mechanics and Technical Physics

SN - 0021-8944

IS - 5

ER -

ID: 59547634