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Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide. / Zamchiy, A. O.; Baranov, E. A.; Merkulova, I. E. и др.

в: Technical Physics Letters, Том 46, № 6, 01.06.2020, стр. 583-586.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Zamchiy, AO, Baranov, EA, Merkulova, IE, Lunev, NA, Volodin, VA & Maksimovskii, EA 2020, 'Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide', Technical Physics Letters, Том. 46, № 6, стр. 583-586. https://doi.org/10.1134/S1063785020060280

APA

Zamchiy, A. O., Baranov, E. A., Merkulova, I. E., Lunev, N. A., Volodin, V. A., & Maksimovskii, E. A. (2020). Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide. Technical Physics Letters, 46(6), 583-586. https://doi.org/10.1134/S1063785020060280

Vancouver

Zamchiy AO, Baranov EA, Merkulova IE, Lunev NA, Volodin VA, Maksimovskii EA. Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide. Technical Physics Letters. 2020 июнь 1;46(6):583-586. doi: 10.1134/S1063785020060280

Author

Zamchiy, A. O. ; Baranov, E. A. ; Merkulova, I. E. и др. / Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide. в: Technical Physics Letters. 2020 ; Том 46, № 6. стр. 583-586.

BibTeX

@article{a3a49c25fc694deca935663fee0ada50,
title = "Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide",
abstract = "A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO0.5). It is established that the use of indium in the course of a-SiO0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.",
keywords = "indium-induced crystallization, polycrystalline silicon, silicon suboxide, thin films",
author = "Zamchiy, {A. O.} and Baranov, {E. A.} and Merkulova, {I. E.} and Lunev, {N. A.} and Volodin, {V. A.} and Maksimovskii, {E. A.}",
note = "Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd.",
year = "2020",
month = jun,
day = "1",
doi = "10.1134/S1063785020060280",
language = "English",
volume = "46",
pages = "583--586",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "6",

}

RIS

TY - JOUR

T1 - Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

AU - Zamchiy, A. O.

AU - Baranov, E. A.

AU - Merkulova, I. E.

AU - Lunev, N. A.

AU - Volodin, V. A.

AU - Maksimovskii, E. A.

N1 - Publisher Copyright: © 2020, Pleiades Publishing, Ltd.

PY - 2020/6/1

Y1 - 2020/6/1

N2 - A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO0.5). It is established that the use of indium in the course of a-SiO0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.

AB - A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO0.5). It is established that the use of indium in the course of a-SiO0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.

KW - indium-induced crystallization

KW - polycrystalline silicon

KW - silicon suboxide

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=85088592425&partnerID=8YFLogxK

U2 - 10.1134/S1063785020060280

DO - 10.1134/S1063785020060280

M3 - Article

AN - SCOPUS:85088592425

VL - 46

SP - 583

EP - 586

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 6

ER -

ID: 24831256