TY - JOUR

T1 - Growth of Silicene by Molecular Beam Epitaxy on CaF2/Si(111) Substrates Modified by Electron Irradiation

AU - Zinovieva, A. F.

AU - Zinovyev, V. A.

AU - Katsyuba, A. V.

AU - Volodin, V. A.

AU - Muratov, V. I.

AU - Dvurechenskii, A. V.

N1 - This work was supported by the Ministry of Science and Higher Education of the Russian Federation (project no. FWGW-2022-0011) Physical Phenomena in Quantum Structures for Components of Nanoelectronics, Nanophotonics, and Spintronics.

PY - 2024/5

Y1 - 2024/5

N2 - For the first time, the possibility of producing silicene on CaF2/Si(111) substrates modified by electron irradiation is experimentally demonstrated. It is shown that areas of the planar surface of CaSi2 with hexagonal packing formed under an electron beam can be used as a natural template for the subsequent growth of silicene. Silicon is deposited on such surfaces and the formation of silicene islands is confirmed by atomic force microscopy and Raman spectroscopy.

AB - For the first time, the possibility of producing silicene on CaF2/Si(111) substrates modified by electron irradiation is experimentally demonstrated. It is shown that areas of the planar surface of CaSi2 with hexagonal packing formed under an electron beam can be used as a natural template for the subsequent growth of silicene. Silicon is deposited on such surfaces and the formation of silicene islands is confirmed by atomic force microscopy and Raman spectroscopy.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85196737652&origin=inward&txGid=3c7020130d7b60b6c1ade707758ad32e

UR - https://www.mendeley.com/catalogue/8e818a58-1b55-3606-bfcd-5deb4afd93b0/

U2 - 10.1134/S0021364024600599

DO - 10.1134/S0021364024600599

M3 - Article

VL - 119

SP - 703

EP - 707

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 9

ER -