Research output: Contribution to journal › Article › peer-review
Growth of Silicene by Molecular Beam Epitaxy on CaF2/Si(111) Substrates Modified by Electron Irradiation. / Zinovieva, A. F.; Zinovyev, V. A.; Katsyuba, A. V. et al.
In: JETP Letters, Vol. 119, No. 9, 05.2024, p. 703-707.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Growth of Silicene by Molecular Beam Epitaxy on CaF2/Si(111) Substrates Modified by Electron Irradiation
AU - Zinovieva, A. F.
AU - Zinovyev, V. A.
AU - Katsyuba, A. V.
AU - Volodin, V. A.
AU - Muratov, V. I.
AU - Dvurechenskii, A. V.
N1 - This work was supported by the Ministry of Science and Higher Education of the Russian Federation (project no. FWGW-2022-0011) Physical Phenomena in Quantum Structures for Components of Nanoelectronics, Nanophotonics, and Spintronics.
PY - 2024/5
Y1 - 2024/5
N2 - For the first time, the possibility of producing silicene on CaF2/Si(111) substrates modified by electron irradiation is experimentally demonstrated. It is shown that areas of the planar surface of CaSi2 with hexagonal packing formed under an electron beam can be used as a natural template for the subsequent growth of silicene. Silicon is deposited on such surfaces and the formation of silicene islands is confirmed by atomic force microscopy and Raman spectroscopy.
AB - For the first time, the possibility of producing silicene on CaF2/Si(111) substrates modified by electron irradiation is experimentally demonstrated. It is shown that areas of the planar surface of CaSi2 with hexagonal packing formed under an electron beam can be used as a natural template for the subsequent growth of silicene. Silicon is deposited on such surfaces and the formation of silicene islands is confirmed by atomic force microscopy and Raman spectroscopy.
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85196737652&origin=inward&txGid=3c7020130d7b60b6c1ade707758ad32e
UR - https://www.mendeley.com/catalogue/8e818a58-1b55-3606-bfcd-5deb4afd93b0/
U2 - 10.1134/S0021364024600599
DO - 10.1134/S0021364024600599
M3 - Article
VL - 119
SP - 703
EP - 707
JO - JETP Letters
JF - JETP Letters
SN - 0021-3640
IS - 9
ER -
ID: 61123510