Standard

Determining the Compositional Profile of HgTe/Cd xHg1 – xTe Quantum Wells by Single-Wavelength Ellipsometry. / Shvets, V. A.; Mikhailov, N. N.; Ikusov, D. G. и др.

в: Optics and Spectroscopy, Том 127, № 2, 01.08.2019, стр. 340-346.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Shvets, VA, Mikhailov, NN, Ikusov, DG, Uzhakov, IN & Dvoretskii, SA 2019, 'Determining the Compositional Profile of HgTe/Cd xHg1 – xTe Quantum Wells by Single-Wavelength Ellipsometry', Optics and Spectroscopy, Том. 127, № 2, стр. 340-346. https://doi.org/10.1134/S0030400X19080253

APA

Shvets, V. A., Mikhailov, N. N., Ikusov, D. G., Uzhakov, I. N., & Dvoretskii, S. A. (2019). Determining the Compositional Profile of HgTe/Cd xHg1 – xTe Quantum Wells by Single-Wavelength Ellipsometry. Optics and Spectroscopy, 127(2), 340-346. https://doi.org/10.1134/S0030400X19080253

Vancouver

Shvets VA, Mikhailov NN, Ikusov DG, Uzhakov IN, Dvoretskii SA. Determining the Compositional Profile of HgTe/Cd xHg1 – xTe Quantum Wells by Single-Wavelength Ellipsometry. Optics and Spectroscopy. 2019 авг. 1;127(2):340-346. doi: 10.1134/S0030400X19080253

Author

Shvets, V. A. ; Mikhailov, N. N. ; Ikusov, D. G. и др. / Determining the Compositional Profile of HgTe/Cd xHg1 – xTe Quantum Wells by Single-Wavelength Ellipsometry. в: Optics and Spectroscopy. 2019 ; Том 127, № 2. стр. 340-346.

BibTeX

@article{adddcc1206bc48398c235991bcc9c704,
title = "Determining the Compositional Profile of HgTe/Cd xHg1 – xTe Quantum Wells by Single-Wavelength Ellipsometry",
abstract = "An ellipsometric method for reconstructing the thickness compositional profile in thin heterostructure nanolayers grown by molecular beam epitaxy on the basis of a cadmium–mercury–tellurium compound has been developed. The method is based on solving an inverse ellipsometric problem with the replacement of part of an inhomogeneous layer with a homogeneous medium with specially selected optical constants. The numerical simulation has confirmed the correctness of this replacement and efficiency of the developed algorithm. Using this method, the active region of a heterostructure consisting of five HgTe quantum wells separated by wide-gap CdHgTe spacers has been investigated. Based on the results of continuous in situ ellipsometry measurements performed during the heterostructure growth, the compositional profiles for all the five sequentially grown quantum wells have been calculated and the high reproducibility of the thickness dependences of their composition has been demonstrated.",
keywords = "compositional profile, ellipsometric parameters, molecular beam epitaxy",
author = "Shvets, {V. A.} and Mikhailov, {N. N.} and Ikusov, {D. G.} and Uzhakov, {I. N.} and Dvoretskii, {S. A.}",
year = "2019",
month = aug,
day = "1",
doi = "10.1134/S0030400X19080253",
language = "English",
volume = "127",
pages = "340--346",
journal = "Optics and Spectroscopy (English translation of Optika i Spektroskopiya)",
issn = "0030-400X",
publisher = "Maik Nauka Publishing / Springer SBM",
number = "2",

}

RIS

TY - JOUR

T1 - Determining the Compositional Profile of HgTe/Cd xHg1 – xTe Quantum Wells by Single-Wavelength Ellipsometry

AU - Shvets, V. A.

AU - Mikhailov, N. N.

AU - Ikusov, D. G.

AU - Uzhakov, I. N.

AU - Dvoretskii, S. A.

PY - 2019/8/1

Y1 - 2019/8/1

N2 - An ellipsometric method for reconstructing the thickness compositional profile in thin heterostructure nanolayers grown by molecular beam epitaxy on the basis of a cadmium–mercury–tellurium compound has been developed. The method is based on solving an inverse ellipsometric problem with the replacement of part of an inhomogeneous layer with a homogeneous medium with specially selected optical constants. The numerical simulation has confirmed the correctness of this replacement and efficiency of the developed algorithm. Using this method, the active region of a heterostructure consisting of five HgTe quantum wells separated by wide-gap CdHgTe spacers has been investigated. Based on the results of continuous in situ ellipsometry measurements performed during the heterostructure growth, the compositional profiles for all the five sequentially grown quantum wells have been calculated and the high reproducibility of the thickness dependences of their composition has been demonstrated.

AB - An ellipsometric method for reconstructing the thickness compositional profile in thin heterostructure nanolayers grown by molecular beam epitaxy on the basis of a cadmium–mercury–tellurium compound has been developed. The method is based on solving an inverse ellipsometric problem with the replacement of part of an inhomogeneous layer with a homogeneous medium with specially selected optical constants. The numerical simulation has confirmed the correctness of this replacement and efficiency of the developed algorithm. Using this method, the active region of a heterostructure consisting of five HgTe quantum wells separated by wide-gap CdHgTe spacers has been investigated. Based on the results of continuous in situ ellipsometry measurements performed during the heterostructure growth, the compositional profiles for all the five sequentially grown quantum wells have been calculated and the high reproducibility of the thickness dependences of their composition has been demonstrated.

KW - compositional profile

KW - ellipsometric parameters

KW - molecular beam epitaxy

UR - http://www.scopus.com/inward/record.url?scp=85073231615&partnerID=8YFLogxK

U2 - 10.1134/S0030400X19080253

DO - 10.1134/S0030400X19080253

M3 - Article

AN - SCOPUS:85073231615

VL - 127

SP - 340

EP - 346

JO - Optics and Spectroscopy (English translation of Optika i Spektroskopiya)

JF - Optics and Spectroscopy (English translation of Optika i Spektroskopiya)

SN - 0030-400X

IS - 2

ER -

ID: 21856045