TY - JOUR

T1 - Charge transport mechanism in [GeOx](z)[SiO2](1-z) based MIS structures

AU - Yushkov, I. D.

AU - Gismatulin, A. A.

AU - Prosvirin, I. P.

AU - Kamaev, G. N.

AU - Marin, D. V.

AU - Vergnat, M.

AU - Volodin, V. A.

N1 - The authors acknowledge the Shared Research Center \u201CVTAN\u201D of the Novosibirsk State University. This investigation was supported jointly by grants from the Russian Science Foundation (Project No. 22-19-00369 for the analysis of charge transport mechanism) and the state assignment from the Ministry of Science and Higher Education of the Russian Federation (Theme No. FSUS 2024-0020 for the structural studies). The authors are grateful to Professor V. A. Gritsenko and Dr. P. Geidt for useful discussions.

PY - 2024/12/9

Y1 - 2024/12/9

N2 - The mechanisms of conductivity in metal-insulator-semiconductor (MIS) structures based on [GeOx](z)[SiO2](1-z) films (0.25 ≤ z ≤ 1) fabricated by co-evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on a p+-type silicon substrate are studied. Indium tin oxide deposited by magnetron method is used as the top electrode. According to IR spectroscopy, Ge-O, Si-O, and Ge-O-Si bonds are detected in the films, while no features related to the presence of germanium clusters are found in the Raman spectra. The current-voltage characteristics (I-V curves) are measured at different temperatures and analyzed by applying the eight most common models of charge transport in MIS structures. It is found that the experimental I-V curves are most accurately approximated in the space charge limited current model, and the parameters of the charge traps are determined within this model.

AB - The mechanisms of conductivity in metal-insulator-semiconductor (MIS) structures based on [GeOx](z)[SiO2](1-z) films (0.25 ≤ z ≤ 1) fabricated by co-evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on a p+-type silicon substrate are studied. Indium tin oxide deposited by magnetron method is used as the top electrode. According to IR spectroscopy, Ge-O, Si-O, and Ge-O-Si bonds are detected in the films, while no features related to the presence of germanium clusters are found in the Raman spectra. The current-voltage characteristics (I-V curves) are measured at different temperatures and analyzed by applying the eight most common models of charge transport in MIS structures. It is found that the experimental I-V curves are most accurately approximated in the space charge limited current model, and the parameters of the charge traps are determined within this model.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85212412190&origin=inward&txGid=4064dacf77c4d39a3cf74419e815c632

UR - https://www.mendeley.com/catalogue/a15f630c-b2b4-3aa3-8b60-657980aa2184/

U2 - 10.1063/5.0240239

DO - 10.1063/5.0240239

M3 - Article

VL - 125

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 242901

ER -