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Charge transport mechanism in [GeOx](z)[SiO2](1-z) based MIS structures. / Yushkov, I. D.; Gismatulin, A. A.; Prosvirin, I. P. et al.

In: Applied Physics Letters, Vol. 125, No. 24, 242901, 09.12.2024.

Research output: Contribution to journal › Article › peer-review

Harvard

Yushkov, ID, Gismatulin, AA, Prosvirin, IP, Kamaev, GN, Marin, DV, Vergnat, M & Volodin, VA 2024, 'Charge transport mechanism in [GeOx](z)[SiO2](1-z) based MIS structures', Applied Physics Letters, vol. 125, no. 24, 242901. https://doi.org/10.1063/5.0240239

APA

Yushkov, I. D., Gismatulin, A. A., Prosvirin, I. P., Kamaev, G. N., Marin, D. V., Vergnat, M., & Volodin, V. A. (2024). Charge transport mechanism in [GeOx](z)[SiO2](1-z) based MIS structures. Applied Physics Letters, 125(24), [242901]. https://doi.org/10.1063/5.0240239

Vancouver

Yushkov ID, Gismatulin AA, Prosvirin IP, Kamaev GN, Marin DV, Vergnat M et al. Charge transport mechanism in [GeOx](z)[SiO2](1-z) based MIS structures. Applied Physics Letters. 2024 Dec 9;125(24):242901. doi: 10.1063/5.0240239

Author

Yushkov, I. D. ; Gismatulin, A. A. ; Prosvirin, I. P. et al. / Charge transport mechanism in [GeOx](z)[SiO2](1-z) based MIS structures. In: Applied Physics Letters. 2024 ; Vol. 125, No. 24.

BibTeX

@article{67f9694ca337473da778656d6017804b,
title = "Charge transport mechanism in [GeOx](z)[SiO2](1-z) based MIS structures",
abstract = "The mechanisms of conductivity in metal-insulator-semiconductor (MIS) structures based on [GeOx](z)[SiO2](1-z) films (0.25 ≤ z ≤ 1) fabricated by co-evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on a p+-type silicon substrate are studied. Indium tin oxide deposited by magnetron method is used as the top electrode. According to IR spectroscopy, Ge-O, Si-O, and Ge-O-Si bonds are detected in the films, while no features related to the presence of germanium clusters are found in the Raman spectra. The current-voltage characteristics (I-V curves) are measured at different temperatures and analyzed by applying the eight most common models of charge transport in MIS structures. It is found that the experimental I-V curves are most accurately approximated in the space charge limited current model, and the parameters of the charge traps are determined within this model.",
author = "Yushkov, {I. D.} and Gismatulin, {A. A.} and Prosvirin, {I. P.} and Kamaev, {G. N.} and Marin, {D. V.} and M. Vergnat and Volodin, {V. A.}",
note = "The authors acknowledge the Shared Research Center \u201CVTAN\u201D of the Novosibirsk State University. This investigation was supported jointly by grants from the Russian Science Foundation (Project No. 22-19-00369 for the analysis of charge transport mechanism) and the state assignment from the Ministry of Science and Higher Education of the Russian Federation (Theme No. FSUS 2024-0020 for the structural studies). The authors are grateful to Professor V. A. Gritsenko and Dr. P. Geidt for useful discussions.",
year = "2024",
month = dec,
day = "9",
doi = "10.1063/5.0240239",
language = "English",
volume = "125",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "24",

}

RIS

TY - JOUR

T1 - Charge transport mechanism in [GeOx](z)[SiO2](1-z) based MIS structures

AU - Yushkov, I. D.

AU - Gismatulin, A. A.

AU - Prosvirin, I. P.

AU - Kamaev, G. N.

AU - Marin, D. V.

AU - Vergnat, M.

AU - Volodin, V. A.

N1 - The authors acknowledge the Shared Research Center \u201CVTAN\u201D of the Novosibirsk State University. This investigation was supported jointly by grants from the Russian Science Foundation (Project No. 22-19-00369 for the analysis of charge transport mechanism) and the state assignment from the Ministry of Science and Higher Education of the Russian Federation (Theme No. FSUS 2024-0020 for the structural studies). The authors are grateful to Professor V. A. Gritsenko and Dr. P. Geidt for useful discussions.

PY - 2024/12/9

Y1 - 2024/12/9

N2 - The mechanisms of conductivity in metal-insulator-semiconductor (MIS) structures based on [GeOx](z)[SiO2](1-z) films (0.25 ≤ z ≤ 1) fabricated by co-evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on a p+-type silicon substrate are studied. Indium tin oxide deposited by magnetron method is used as the top electrode. According to IR spectroscopy, Ge-O, Si-O, and Ge-O-Si bonds are detected in the films, while no features related to the presence of germanium clusters are found in the Raman spectra. The current-voltage characteristics (I-V curves) are measured at different temperatures and analyzed by applying the eight most common models of charge transport in MIS structures. It is found that the experimental I-V curves are most accurately approximated in the space charge limited current model, and the parameters of the charge traps are determined within this model.

AB - The mechanisms of conductivity in metal-insulator-semiconductor (MIS) structures based on [GeOx](z)[SiO2](1-z) films (0.25 ≤ z ≤ 1) fabricated by co-evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on a p+-type silicon substrate are studied. Indium tin oxide deposited by magnetron method is used as the top electrode. According to IR spectroscopy, Ge-O, Si-O, and Ge-O-Si bonds are detected in the films, while no features related to the presence of germanium clusters are found in the Raman spectra. The current-voltage characteristics (I-V curves) are measured at different temperatures and analyzed by applying the eight most common models of charge transport in MIS structures. It is found that the experimental I-V curves are most accurately approximated in the space charge limited current model, and the parameters of the charge traps are determined within this model.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85212412190&origin=inward&txGid=4064dacf77c4d39a3cf74419e815c632

UR - https://www.mendeley.com/catalogue/a15f630c-b2b4-3aa3-8b60-657980aa2184/

U2 - 10.1063/5.0240239

DO - 10.1063/5.0240239

M3 - Article

VL - 125

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 242901

ER -

ID: 61318499