TY - JOUR

T1 - Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 × 7) at elevated temperatures

AU - Makeeva, A. A.

AU - Petrov, A. S.

AU - Rogilo, D. I.

AU - Sheglov, D. V.

AU - Latyshev, A. V.

PY - 2024/8/26

Y1 - 2024/8/26

N2 - Recently we have studied the concentration N2D of 2D Ge island nucleated on large-scale Si(111)-(7 × 7) terraces at 550 − 650 °C as function of the substrate temperature T and Ge deposition rate R [J. Cryst. Growth. 531 (2020) 125347], where we have shown that N2D(R) dependence is characterized by a power law with scaling exponent χ = 1 ± 0.1. However, in the frames of classical Venables rate-equation approach, the obtained range of χ values do not allow one to unambiguously determine the critical nucleus size i, since χ = 1 ± 0.1 can be attributed to both diffusion limited (DL) and attachment limited (AL) growth regimes. In order to determine an exact i size and growth kinetics, in this work, we have investigated the scaled capture-zone distribution (CZD) of nucleated 2D Ge islands on the same Ge/Si(111)-(7 × 7) samples and described it by the generalized Wigner distribution Pβ=aβAβexp-bβA2, where Pβ is the probability density of getting into some region of capture zone values, A is normalized Voronoi cell area for 2D island, [Formula presented] is scaling parameter directly related to the critical nucleus size i. It has been shown that the kinetics of 2D Ge island nucleation on the wide Si(111)-(7 × 7) terraces at elevated temperatures should procced under AL growth kinetics with i = 3–5 particles.

AB - Recently we have studied the concentration N2D of 2D Ge island nucleated on large-scale Si(111)-(7 × 7) terraces at 550 − 650 °C as function of the substrate temperature T and Ge deposition rate R [J. Cryst. Growth. 531 (2020) 125347], where we have shown that N2D(R) dependence is characterized by a power law with scaling exponent χ = 1 ± 0.1. However, in the frames of classical Venables rate-equation approach, the obtained range of χ values do not allow one to unambiguously determine the critical nucleus size i, since χ = 1 ± 0.1 can be attributed to both diffusion limited (DL) and attachment limited (AL) growth regimes. In order to determine an exact i size and growth kinetics, in this work, we have investigated the scaled capture-zone distribution (CZD) of nucleated 2D Ge islands on the same Ge/Si(111)-(7 × 7) samples and described it by the generalized Wigner distribution Pβ=aβAβexp-bβA2, where Pβ is the probability density of getting into some region of capture zone values, A is normalized Voronoi cell area for 2D island, [Formula presented] is scaling parameter directly related to the critical nucleus size i. It has been shown that the kinetics of 2D Ge island nucleation on the wide Si(111)-(7 × 7) terraces at elevated temperatures should procced under AL growth kinetics with i = 3–5 particles.

KW - A1. Growth models

KW - A1. Nucleation

KW - A1. Surface processes

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting germanium

KW - B2. Semiconducting silicon

UR - https://www.mendeley.com/catalogue/c6b080a0-5a5d-39c6-ad9e-f540f1914d5c/

U2 - 10.1016/j.jcrysgro.2024.127873

DO - 10.1016/j.jcrysgro.2024.127873

M3 - статья

VL - 647

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 127873

M1 - 127873

ER -