Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 × 7) at elevated temperatures. / Makeeva, A. A.; Petrov, A. S.; Rogilo, D. I. et al.
In: Journal of Crystal Growth, Vol. 647, No. 127873, 127873, 26.08.2024.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 × 7) at elevated temperatures
AU - Makeeva, A. A.
AU - Petrov, A. S.
AU - Rogilo, D. I.
AU - Sheglov, D. V.
AU - Latyshev, A. V.
PY - 2024/8/26
Y1 - 2024/8/26
N2 - Recently we have studied the concentration N2D of 2D Ge island nucleated on large-scale Si(111)-(7 × 7) terraces at 550 − 650 °C as function of the substrate temperature T and Ge deposition rate R [J. Cryst. Growth. 531 (2020) 125347], where we have shown that N2D(R) dependence is characterized by a power law with scaling exponent χ = 1 ± 0.1. However, in the frames of classical Venables rate-equation approach, the obtained range of χ values do not allow one to unambiguously determine the critical nucleus size i, since χ = 1 ± 0.1 can be attributed to both diffusion limited (DL) and attachment limited (AL) growth regimes. In order to determine an exact i size and growth kinetics, in this work, we have investigated the scaled capture-zone distribution (CZD) of nucleated 2D Ge islands on the same Ge/Si(111)-(7 × 7) samples and described it by the generalized Wigner distribution Pβ=aβAβexp-bβA2, where Pβ is the probability density of getting into some region of capture zone values, A is normalized Voronoi cell area for 2D island, [Formula presented] is scaling parameter directly related to the critical nucleus size i. It has been shown that the kinetics of 2D Ge island nucleation on the wide Si(111)-(7 × 7) terraces at elevated temperatures should procced under AL growth kinetics with i = 3–5 particles.
AB - Recently we have studied the concentration N2D of 2D Ge island nucleated on large-scale Si(111)-(7 × 7) terraces at 550 − 650 °C as function of the substrate temperature T and Ge deposition rate R [J. Cryst. Growth. 531 (2020) 125347], where we have shown that N2D(R) dependence is characterized by a power law with scaling exponent χ = 1 ± 0.1. However, in the frames of classical Venables rate-equation approach, the obtained range of χ values do not allow one to unambiguously determine the critical nucleus size i, since χ = 1 ± 0.1 can be attributed to both diffusion limited (DL) and attachment limited (AL) growth regimes. In order to determine an exact i size and growth kinetics, in this work, we have investigated the scaled capture-zone distribution (CZD) of nucleated 2D Ge islands on the same Ge/Si(111)-(7 × 7) samples and described it by the generalized Wigner distribution Pβ=aβAβexp-bβA2, where Pβ is the probability density of getting into some region of capture zone values, A is normalized Voronoi cell area for 2D island, [Formula presented] is scaling parameter directly related to the critical nucleus size i. It has been shown that the kinetics of 2D Ge island nucleation on the wide Si(111)-(7 × 7) terraces at elevated temperatures should procced under AL growth kinetics with i = 3–5 particles.
KW - A1. Growth models
KW - A1. Nucleation
KW - A1. Surface processes
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting germanium
KW - B2. Semiconducting silicon
UR - https://www.mendeley.com/catalogue/c6b080a0-5a5d-39c6-ad9e-f540f1914d5c/
U2 - 10.1016/j.jcrysgro.2024.127873
DO - 10.1016/j.jcrysgro.2024.127873
M3 - статья
VL - 647
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 127873
M1 - 127873
ER -
ID: 60779026