Research output: Contribution to journal › Article › peer-review
Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors. / Malin, T. V.; Milakhin, D. S.; Aleksandrov, I. A. et al.
In: Technical Physics Letters, Vol. 45, No. 8, 01.08.2019, p. 761-764.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors
AU - Malin, T. V.
AU - Milakhin, D. S.
AU - Aleksandrov, I. A.
AU - Zemlyakov, V. E.
AU - Egorkin, V. I.
AU - Zaitsev, A. A.
AU - Protasov, D. Yu
AU - Kozhukhov, A. S.
AU - Ber, B. Ya
AU - Kazantsev, D. Yu
AU - Mansurov, V. G.
AU - Zhuravlev, K. S.
PY - 2019/8/1
Y1 - 2019/8/1
N2 - It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes.
AB - It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes.
KW - AlGaN/GaN
KW - background impurities
KW - GaN
KW - high-electron-mobility transistor
KW - intrinsic point defects
KW - NH–MBE
KW - SAPPHIRE
KW - CARBON
KW - GROWTH
KW - NH3-MBE
KW - AlGaN
UR - http://www.scopus.com/inward/record.url?scp=85071929690&partnerID=8YFLogxK
U2 - 10.1134/S1063785019080108
DO - 10.1134/S1063785019080108
M3 - Article
AN - SCOPUS:85071929690
VL - 45
SP - 761
EP - 764
JO - Technical Physics Letters
JF - Technical Physics Letters
SN - 1063-7850
IS - 8
ER -
ID: 21464753