Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors › Research Explorer

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Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

Research output: Contribution to journal › Article › peer-review

Лаборатория полупроводниковых и диэлектрических материалов ФФ

DOI

https://doi.org/10.1134/S1063785019080108
Final published version

T. V. Malin
D. S. Milakhin
I. A. Aleksandrov
V. E. Zemlyakov
V. I. Egorkin
A. A. Zaitsev
D. Yu Protasov
A. S. Kozhukhov
B. Ya Ber
D. Yu Kazantsev
V. G. Mansurov
K. S. Zhuravlev

Original language	English
Pages (from-to)	761-764
Number of pages	4
Journal	Technical Physics Letters
Volume	45
Issue number	8
DOIs	https://doi.org/10.1134/S1063785019080108
Publication status	Published - 1 Aug 2019

Research areas

AlGaN/GaN, background impurities, GaN, high-electron-mobility transistor, intrinsic point defects, NH–MBE, SAPPHIRE, CARBON, GROWTH, NH3-MBE, AlGaN

OECD FOS+WOS

ID: 21464753