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Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors. / Malin, T. V.; Milakhin, D. S.; Aleksandrov, I. A. и др.

в: Technical Physics Letters, Том 45, № 8, 01.08.2019, стр. 761-764.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Malin, TV, Milakhin, DS, Aleksandrov, IA, Zemlyakov, VE, Egorkin, VI, Zaitsev, AA, Protasov, DY, Kozhukhov, AS, Ber, BY, Kazantsev, DY, Mansurov, VG & Zhuravlev, KS 2019, 'Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors', Technical Physics Letters, Том. 45, № 8, стр. 761-764. https://doi.org/10.1134/S1063785019080108

APA

Malin, T. V., Milakhin, D. S., Aleksandrov, I. A., Zemlyakov, V. E., Egorkin, V. I., Zaitsev, A. A., Protasov, D. Y., Kozhukhov, A. S., Ber, B. Y., Kazantsev, D. Y., Mansurov, V. G., & Zhuravlev, K. S. (2019). Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors. Technical Physics Letters, 45(8), 761-764. https://doi.org/10.1134/S1063785019080108

Vancouver

Malin TV, Milakhin DS, Aleksandrov IA, Zemlyakov VE, Egorkin VI, Zaitsev AA и др. Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors. Technical Physics Letters. 2019 авг. 1;45(8):761-764. doi: 10.1134/S1063785019080108

Author

Malin, T. V. ; Milakhin, D. S. ; Aleksandrov, I. A. и др. / Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors. в: Technical Physics Letters. 2019 ; Том 45, № 8. стр. 761-764.

BibTeX

@article{f9cba4009e3a44e88bed54100e4f6948,
title = "Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors",
abstract = "It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes.",
keywords = "AlGaN/GaN, background impurities, GaN, high-electron-mobility transistor, intrinsic point defects, NH–MBE, SAPPHIRE, CARBON, GROWTH, NH3-MBE, AlGaN",
author = "Malin, {T. V.} and Milakhin, {D. S.} and Aleksandrov, {I. A.} and Zemlyakov, {V. E.} and Egorkin, {V. I.} and Zaitsev, {A. A.} and Protasov, {D. Yu} and Kozhukhov, {A. S.} and Ber, {B. Ya} and Kazantsev, {D. Yu} and Mansurov, {V. G.} and Zhuravlev, {K. S.}",
year = "2019",
month = aug,
day = "1",
doi = "10.1134/S1063785019080108",
language = "English",
volume = "45",
pages = "761--764",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "8",

}

RIS

TY - JOUR

T1 - Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

AU - Malin, T. V.

AU - Milakhin, D. S.

AU - Aleksandrov, I. A.

AU - Zemlyakov, V. E.

AU - Egorkin, V. I.

AU - Zaitsev, A. A.

AU - Protasov, D. Yu

AU - Kozhukhov, A. S.

AU - Ber, B. Ya

AU - Kazantsev, D. Yu

AU - Mansurov, V. G.

AU - Zhuravlev, K. S.

PY - 2019/8/1

Y1 - 2019/8/1

N2 - It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes.

AB - It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes.

KW - AlGaN/GaN

KW - background impurities

KW - GaN

KW - high-electron-mobility transistor

KW - intrinsic point defects

KW - NH–MBE

KW - SAPPHIRE

KW - CARBON

KW - GROWTH

KW - NH3-MBE

KW - AlGaN

UR - http://www.scopus.com/inward/record.url?scp=85071929690&partnerID=8YFLogxK

U2 - 10.1134/S1063785019080108

DO - 10.1134/S1063785019080108

M3 - Article

AN - SCOPUS:85071929690

VL - 45

SP - 761

EP - 764

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 8

ER -

ID: 21464753