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The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures. / Sonmez, F.; Ardali, S.; Atmaca, G. et al.

In: Materials Science in Semiconductor Processing, Vol. 122, 105449, 02.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Sonmez, F, Ardali, S, Atmaca, G, Lisesivdin, SB, Malin, T, Mansurov, V, Zhuravlev, K & Tiras, E 2021, 'The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures', Materials Science in Semiconductor Processing, vol. 122, 105449. https://doi.org/10.1016/j.mssp.2020.105449

APA

Sonmez, F., Ardali, S., Atmaca, G., Lisesivdin, S. B., Malin, T., Mansurov, V., Zhuravlev, K., & Tiras, E. (2021). The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures. Materials Science in Semiconductor Processing, 122, [105449]. https://doi.org/10.1016/j.mssp.2020.105449

Vancouver

Sonmez F, Ardali S, Atmaca G, Lisesivdin SB, Malin T, Mansurov V et al. The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures. Materials Science in Semiconductor Processing. 2021 Feb;122:105449. doi: 10.1016/j.mssp.2020.105449

Author

Sonmez, F. ; Ardali, S. ; Atmaca, G. et al. / The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures. In: Materials Science in Semiconductor Processing. 2021 ; Vol. 122.

BibTeX

@article{5acc9fb7ceff474889481c5003a63f02,
title = "The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures",
abstract = "The Raman and classical Hall effect measurements have been used to determine the longitudinal optical phonon energy, effective mass, and optical phonon relaxation times in Al0.3Ga0.7N/AlN/GaN heterostructures grown by the Molecular Beam Epitaxy (MBE) technique. The classical Hall effect measurements were performed at temperatures between 1.8 and 262 K at a fixed magnetic field, while Raman measurements were performed at room temperature. The longitudinal optical (LO) phonon energy has been found at higher temperatures where Hall mobility data is rapidly decreasing. The effective mass is obtained by comparing the A1(LO) peak obtained from Raman measurements to theoretical calculations. The effect of passivation, spacer layer, and doping on the LO phonon relaxation times were determined. The LO phonon relaxation times, which are important for the device's performance, were found between 8.97 and 9.20 fs.",
keywords = "AlGaN/GaN, Electron effective mass, Hall mobility, Longitudinal optical phonon energy, Longitudinal optical phonon relaxation time, Raman spectroscopy, ENERGY, DISPERSION, ALN SPACER, RAMAN-SCATTERING, TRANSPORT, EFFECTIVE-MASS, HALL-EFFECT MEASUREMENTS, SPECTROSCOPY, GAN, ACCUMULATION",
author = "F. Sonmez and S. Ardali and G. Atmaca and Lisesivdin, {S. B.} and T. Malin and V. Mansurov and K. Zhuravlev and E. Tiras",
year = "2021",
month = feb,
doi = "10.1016/j.mssp.2020.105449",
language = "English",
volume = "122",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures

AU - Sonmez, F.

AU - Ardali, S.

AU - Atmaca, G.

AU - Lisesivdin, S. B.

AU - Malin, T.

AU - Mansurov, V.

AU - Zhuravlev, K.

AU - Tiras, E.

PY - 2021/2

Y1 - 2021/2

N2 - The Raman and classical Hall effect measurements have been used to determine the longitudinal optical phonon energy, effective mass, and optical phonon relaxation times in Al0.3Ga0.7N/AlN/GaN heterostructures grown by the Molecular Beam Epitaxy (MBE) technique. The classical Hall effect measurements were performed at temperatures between 1.8 and 262 K at a fixed magnetic field, while Raman measurements were performed at room temperature. The longitudinal optical (LO) phonon energy has been found at higher temperatures where Hall mobility data is rapidly decreasing. The effective mass is obtained by comparing the A1(LO) peak obtained from Raman measurements to theoretical calculations. The effect of passivation, spacer layer, and doping on the LO phonon relaxation times were determined. The LO phonon relaxation times, which are important for the device's performance, were found between 8.97 and 9.20 fs.

AB - The Raman and classical Hall effect measurements have been used to determine the longitudinal optical phonon energy, effective mass, and optical phonon relaxation times in Al0.3Ga0.7N/AlN/GaN heterostructures grown by the Molecular Beam Epitaxy (MBE) technique. The classical Hall effect measurements were performed at temperatures between 1.8 and 262 K at a fixed magnetic field, while Raman measurements were performed at room temperature. The longitudinal optical (LO) phonon energy has been found at higher temperatures where Hall mobility data is rapidly decreasing. The effective mass is obtained by comparing the A1(LO) peak obtained from Raman measurements to theoretical calculations. The effect of passivation, spacer layer, and doping on the LO phonon relaxation times were determined. The LO phonon relaxation times, which are important for the device's performance, were found between 8.97 and 9.20 fs.

KW - AlGaN/GaN

KW - Electron effective mass

KW - Hall mobility

KW - Longitudinal optical phonon energy

KW - Longitudinal optical phonon relaxation time

KW - Raman spectroscopy

KW - ENERGY

KW - DISPERSION

KW - ALN SPACER

KW - RAMAN-SCATTERING

KW - TRANSPORT

KW - EFFECTIVE-MASS

KW - HALL-EFFECT MEASUREMENTS

KW - SPECTROSCOPY

KW - GAN

KW - ACCUMULATION

UR - http://www.scopus.com/inward/record.url?scp=85091978793&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2020.105449

DO - 10.1016/j.mssp.2020.105449

M3 - Article

AN - SCOPUS:85091978793

VL - 122

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

M1 - 105449

ER -

ID: 25688865