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Surface processing of amorphous optical materials by argon cluster ion beam. / Nikolaev, I. V.; Korobeishchikov, N. G.; Roenko, M. A. et al.

In: Journal of Physics: Conference Series, Vol. 1105, No. 1, 012134, 28.11.2018.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Nikolaev, IV, Korobeishchikov, NG, Roenko, MA & Antonenko, AK 2018, 'Surface processing of amorphous optical materials by argon cluster ion beam', Journal of Physics: Conference Series, vol. 1105, no. 1, 012134. https://doi.org/10.1088/1742-6596/1105/1/012134

APA

Nikolaev, I. V., Korobeishchikov, N. G., Roenko, M. A., & Antonenko, A. K. (2018). Surface processing of amorphous optical materials by argon cluster ion beam. Journal of Physics: Conference Series, 1105(1), [012134]. https://doi.org/10.1088/1742-6596/1105/1/012134

Vancouver

Nikolaev IV, Korobeishchikov NG, Roenko MA, Antonenko AK. Surface processing of amorphous optical materials by argon cluster ion beam. Journal of Physics: Conference Series. 2018 Nov 28;1105(1):012134. doi: 10.1088/1742-6596/1105/1/012134

Author

Nikolaev, I. V. ; Korobeishchikov, N. G. ; Roenko, M. A. et al. / Surface processing of amorphous optical materials by argon cluster ion beam. In: Journal of Physics: Conference Series. 2018 ; Vol. 1105, No. 1.

BibTeX

@article{43d7211da3bd4d8d85f9ab2140ea10d6,
title = "Surface processing of amorphous optical materials by argon cluster ion beam",
abstract = "The production of a high-quality surface of fused silica is an important task for advanced optical technologies. In this work, the surface of fused silica has been processed by argon cluster ion beam having mean cluster size N mean ranged from 180 to 1000 atoms/cluster and energy E ranged from 5 to 23.5 keV. The analysis of surface morphology using atomic force microscopy and the spectral power density (PSD) function shows a noticeable smoothing of roughness in different spatial frequency ranges, depending on the cluster ion parameters. To evaluate the processing efficiency, the dependence of the etching rate of SiO2 on the parameters of cluster ions has been investigated. It is shown that the etching rate v etch is determined by the energy per atom in the cluster E/N mean and it varies from 0.2 to 20 nm/min with an energy change from 5 to 130 eV/atom.",
author = "Nikolaev, {I. V.} and Korobeishchikov, {N. G.} and Roenko, {M. A.} and Antonenko, {A. Kh}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 34th Siberian Thermophysical Seminar Dedicated to the 85th Anniversary of Academician A. K. Rebrov, STS 2018 ; Conference date: 27-08-2018 Through 30-08-2018",
year = "2018",
month = nov,
day = "28",
doi = "10.1088/1742-6596/1105/1/012134",
language = "English",
volume = "1105",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Surface processing of amorphous optical materials by argon cluster ion beam

AU - Nikolaev, I. V.

AU - Korobeishchikov, N. G.

AU - Roenko, M. A.

AU - Antonenko, A. Kh

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2018/11/28

Y1 - 2018/11/28

N2 - The production of a high-quality surface of fused silica is an important task for advanced optical technologies. In this work, the surface of fused silica has been processed by argon cluster ion beam having mean cluster size N mean ranged from 180 to 1000 atoms/cluster and energy E ranged from 5 to 23.5 keV. The analysis of surface morphology using atomic force microscopy and the spectral power density (PSD) function shows a noticeable smoothing of roughness in different spatial frequency ranges, depending on the cluster ion parameters. To evaluate the processing efficiency, the dependence of the etching rate of SiO2 on the parameters of cluster ions has been investigated. It is shown that the etching rate v etch is determined by the energy per atom in the cluster E/N mean and it varies from 0.2 to 20 nm/min with an energy change from 5 to 130 eV/atom.

AB - The production of a high-quality surface of fused silica is an important task for advanced optical technologies. In this work, the surface of fused silica has been processed by argon cluster ion beam having mean cluster size N mean ranged from 180 to 1000 atoms/cluster and energy E ranged from 5 to 23.5 keV. The analysis of surface morphology using atomic force microscopy and the spectral power density (PSD) function shows a noticeable smoothing of roughness in different spatial frequency ranges, depending on the cluster ion parameters. To evaluate the processing efficiency, the dependence of the etching rate of SiO2 on the parameters of cluster ions has been investigated. It is shown that the etching rate v etch is determined by the energy per atom in the cluster E/N mean and it varies from 0.2 to 20 nm/min with an energy change from 5 to 130 eV/atom.

UR - http://www.scopus.com/inward/record.url?scp=85058226376&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1105/1/012134

DO - 10.1088/1742-6596/1105/1/012134

M3 - Conference article

AN - SCOPUS:85058226376

VL - 1105

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012134

T2 - 34th Siberian Thermophysical Seminar Dedicated to the 85th Anniversary of Academician A. K. Rebrov, STS 2018

Y2 - 27 August 2018 through 30 August 2018

ER -

ID: 17852215