Research output: Contribution to journal › Article › peer-review
Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux. / Dmitriev, D. V.; Kolosovsky, D. A.; Fedosenko, E. V. et al.
In: Semiconductors, Vol. 55, No. 11, 11.2021, p. 823-827.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux
AU - Dmitriev, D. V.
AU - Kolosovsky, D. A.
AU - Fedosenko, E. V.
AU - Toropov, A. I.
AU - Zhuravlev, K. S.
N1 - Funding Information: The study was supported by the Russian Foundation for Basic Research and the government of the Novosibirsk region, project no. 20-42-540009. Publisher Copyright: © 2021, Pleiades Publishing, Ltd.
PY - 2021/11
Y1 - 2021/11
N2 - Changes in the structure and elemental composition of the surface of the epitaxy-ready InP(001) substrate in an As flux in ultrahigh vacuum are studied in situ by the reflection high-energy electron diffraction (RHEED) technique. It is shown that, during annealing of the oxide layer at the surface, an InP1 –xAsx layer is formed as a result of the substitution of phosphorus by arsenic. The dependence of the degree of substitution on the annealing temperature and time is established. The degree of the substitution of phosphorus by arsenic in the surface layer is 7% at the annealing temperature 480°C and, reaches 41% at the temperature 540°C. The annealing time influences the degree of substitution only slightly.
AB - Changes in the structure and elemental composition of the surface of the epitaxy-ready InP(001) substrate in an As flux in ultrahigh vacuum are studied in situ by the reflection high-energy electron diffraction (RHEED) technique. It is shown that, during annealing of the oxide layer at the surface, an InP1 –xAsx layer is formed as a result of the substitution of phosphorus by arsenic. The dependence of the degree of substitution on the annealing temperature and time is established. The degree of the substitution of phosphorus by arsenic in the surface layer is 7% at the annealing temperature 480°C and, reaches 41% at the temperature 540°C. The annealing time influences the degree of substitution only slightly.
KW - annealing
KW - arsenic
KW - diffraction
KW - indium phosphide
KW - substitution
UR - http://www.scopus.com/inward/record.url?scp=85124725388&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/0451b654-5bde-34fc-9d49-dc7558400979/
U2 - 10.1134/S1063782621100080
DO - 10.1134/S1063782621100080
M3 - Article
AN - SCOPUS:85124725388
VL - 55
SP - 823
EP - 827
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 11
ER -
ID: 35550921